公开(公告)号：AU2002359079A1

公开(公告)日：2004-03-29

申请号：AU2002359079

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).

公开(公告)号：DE10297788B4

公开(公告)日：2008-06-26

申请号：DE10297788

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01J37/34 ,  H01L21/00 ,  H01L21/02 ,  H01L21/203 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).

公开(公告)号：DE10297788T5

公开(公告)日：2005-08-18

申请号：DE10297788

申请日：2002-12-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHEONG WOO-SEOK ,  LEE SEONG-JAE ,  CHO WON-JU ,  JANG MOON-GYU

IPC: H01L21/285 ,  H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/338 ,  H01L29/417 ,  H01L29/786

Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).