公开(公告)号：JPH09181294A

公开(公告)日：1997-07-11

申请号：JP24790396

申请日：1996-09-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GIYUNOTSUKU KIMU ,  DONWAN ROU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772

Abstract: PROBLEM TO BE SOLVED: To increase a PVR and a peak current using double resonant interband tunnelling hot electronic effect by a method wherein this electronic device is composed of a conductive emitter layer, a conductive collector layer, a conductive base layer, a collector barrier layer and an emitter electron injection layer. SOLUTION: A conductive collector layer 2 and an undoped collector barrier layer 3, located between a conductive base layer 4 and the conductive collector layer 2, are formed on a substrate 1. A quantum well structure, having the lowerst level of conductive band lower than a conductive emitter layer 6 and the conductive collector layer 2, is formed, and a conductive base layer 4 of the material of high electron mobility can be formed. Besides, an emitter electron implantation barrier layer 5, having emitter potential barrier layer structure between the conductive emitter layer 6 and the conductive base layer 4, and a conductive emitter layer 6 are formed. As a result, a peak to valley ratio(PVR) can be increased by the increase of a peak current due to the double resonant turnnelling effect.

公开(公告)号：JPH09181295A

公开(公告)日：1997-07-11

申请号：JP28529096

申请日：1996-10-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GIYUNOTSUKU KIMU ,  DONWAN ROU ,  SEUNUON PAEKU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To provide a device which can improve the performances of a switching device and a logic device by increasing the PVR. SOLUTION: In a resonant tunneling electronic device, a plurality of quantum barrier layers 2, 4, and 6 and quantum well layers 3 and 5 are alternately laminated upon another between an emitter 1 and collector 7 so that the height of each quantum barrier can gradually become higher and, at the same time, the width of each quantum well formed between each quantum barrier can gradually become narrower. In addition, when the quantum barriers and wells are formed so that their heights can become asymmetrical, the structures of the quantum barriers and wells can be adjusted and a tunneling current can be adjusted easily.