公开(公告)号：JPH09181294A

公开(公告)日：1997-07-11

申请号：JP24790396

申请日：1996-09-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GIYUNOTSUKU KIMU ,  DONWAN ROU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772

Abstract: PROBLEM TO BE SOLVED: To increase a PVR and a peak current using double resonant interband tunnelling hot electronic effect by a method wherein this electronic device is composed of a conductive emitter layer, a conductive collector layer, a conductive base layer, a collector barrier layer and an emitter electron injection layer. SOLUTION: A conductive collector layer 2 and an undoped collector barrier layer 3, located between a conductive base layer 4 and the conductive collector layer 2, are formed on a substrate 1. A quantum well structure, having the lowerst level of conductive band lower than a conductive emitter layer 6 and the conductive collector layer 2, is formed, and a conductive base layer 4 of the material of high electron mobility can be formed. Besides, an emitter electron implantation barrier layer 5, having emitter potential barrier layer structure between the conductive emitter layer 6 and the conductive base layer 4, and a conductive emitter layer 6 are formed. As a result, a peak to valley ratio(PVR) can be increased by the increase of a peak current due to the double resonant turnnelling effect.

公开(公告)号：JPH09181295A

公开(公告)日：1997-07-11

申请号：JP28529096

申请日：1996-10-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GIYUNOTSUKU KIMU ,  DONWAN ROU ,  SEUNUON PAEKU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/772 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To provide a device which can improve the performances of a switching device and a logic device by increasing the PVR. SOLUTION: In a resonant tunneling electronic device, a plurality of quantum barrier layers 2, 4, and 6 and quantum well layers 3 and 5 are alternately laminated upon another between an emitter 1 and collector 7 so that the height of each quantum barrier can gradually become higher and, at the same time, the width of each quantum well formed between each quantum barrier can gradually become narrower. In addition, when the quantum barriers and wells are formed so that their heights can become asymmetrical, the structures of the quantum barriers and wells can be adjusted and a tunneling current can be adjusted easily.

公开(公告)号：JPH09181293A

公开(公告)日：1997-07-11

申请号：JP25045896

申请日：1996-09-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GIYUNOTSUKU KIMU

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To increase a peak current and to decrease a valley current by a method wherein the lower part of a conduction band and the upper part of a valence band are overlapped with each other, and said two parts simultaneously perform the function as a quantum well and a barrier against an electron and a hole. SOLUTION: A conductive semiconductor layer 7, which is utilized as a collector layer, is formed on a semiconductor substrate 8, and a semiconductor layer 1, which functions as an emitter layer 1, is formed. A plurality of hole quantum well layers 2, 4 and 6, which are becoming thicker as the collector layer 7 approaches and positioned between the emitter layer 1 and the collector layer 7, are formed. Also, transposition barrier layers 3 and 5, which are arranged between the hole quantum well layers 2, 4 and 6 and become thinner as the collector layer 7 approaches, are formed. As a result, the interband tunnelling effect of electron and the resonant tunnelling effect communicating aligned level can be increased, and also a peak to valley current ratio(PVR) can be increased.