公开(公告)号：JPH09181364A

公开(公告)日：1997-07-11

申请号：JP19445296

申请日：1996-07-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIEONDE SUU ,  GANYAN SON

IPC: H01L39/22 ,  H01L27/18 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an a-axis vertically orientated josephson junction device. SOLUTION: An oxide single crystal substrate 1 is thermally treated at a temperature of 800 to 850 deg.C, and a first oxide normal conductive thin film 2 is formed thereon at a temperature of 630 to 650 deg.C. A first high-temperature superconductive thin film 3 is formed on the normal conductive thin film 2 at a temperature of 750 to 770 deg.C, an oxide insulating thin film 4 is formed thereon at a temperature of 550 to 600 deg.C, a second oxide normal conductive thin film 5 is formed thereon at a temperature of 630 to 650 deg.C, and a second high-temperature superconductive thin film 6 is formed on the normal conductive thin film 5 at a temperature of 750 to 770 deg.C.