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1.发明专利
公开(公告)号：JPH09181365A
公开(公告)日：1997-07-11
申请号：JP23173496
申请日：1996-09-02
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： GUNYON SUN , JIEONDE SUU
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a planar S-I-S Josephson junction device of sloping structure excellent in junction characteristics by use of a YBCO thin film vertical to a horizontally orientated a-axis and an insulating thin film. SOLUTION: A Josephson tunnel junction device is composed of a substrate 1 where a YBCO thin film as a single crystal buffer layer 2 of perovskite crystal structure formed vertical to a b-axis and as thick as 100nm is deposited and a three-layered junction composed of superconductor-insulator-supercondcutor arnd formed on the substrate 1. In the three-layered junction, a lower electrode 3 and an upper electrode 6 are formed of YBCO superconductive thin film vertical to an a-axis, and a barrier layer 5 is formed of insulating film of thickness 2 to 5nm sandwiched between the two superconductive electrode layers, and a junction 4 has an inclined angle of 30 deg. to 70 deg..
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公开(公告)号：JPH09181364A
公开(公告)日：1997-07-11
申请号：JP19445296
申请日：1996-07-24
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： JIEONDE SUU , GANYAN SON
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an a-axis vertically orientated josephson junction device. SOLUTION: An oxide single crystal substrate 1 is thermally treated at a temperature of 800 to 850 deg.C, and a first oxide normal conductive thin film 2 is formed thereon at a temperature of 630 to 650 deg.C. A first high-temperature superconductive thin film 3 is formed on the normal conductive thin film 2 at a temperature of 750 to 770 deg.C, an oxide insulating thin film 4 is formed thereon at a temperature of 550 to 600 deg.C, a second oxide normal conductive thin film 5 is formed thereon at a temperature of 630 to 650 deg.C, and a second high-temperature superconductive thin film 6 is formed on the normal conductive thin film 5 at a temperature of 750 to 770 deg.C.
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公开(公告)号：JPH09181366A
公开(公告)日：1997-07-11
申请号：JP22230496
申请日：1996-08-23
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： GUNYON SUN , JIEONDE SUU
Abstract: PROBLEM TO BE SOLVED: To enhance the field effect by forming a double grain boundary in a high temperature superconducting thin film channel formed on a specified region of a high temperature superconducting source, drain and substrate and then forming a gate insulation layer on the double grain boundary channel region thereby controlling the signal of superconducting source and drain in safety. SOLUTION: The high temperature superconducting field effect device comprises a buffer layer 4 formed in a specified region on a substrate 1, a double grain boundary channel region 6 formed thereon, high temperature superconducting source 2 and drain 3 formed at the opposite ends of a channel region 6 on the substrate 1, a high temperature superconducting thin film channel layer 5 formed on a specified region of a high temperature superconducting source 2 or drain 3 and substrate 1, double grain boundaries 7, 8 formed thereat, and a gate insulation layer 9 formed on the double grain boundary channel region 6. A gate electrode 10 formed on the gate insulation layer 9 deposited at the part of high temperature superconducting film provided with double grain boundaries 7, 8 controls the superconducting current flowing through the grain boundary.
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