公开(公告)号：JPH10190153A

公开(公告)日：1998-07-21

申请号：JP20431897

申请日：1997-07-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HAKU SOKYO ,  RI BAN

IPC: G02B5/08 ,  C23C14/54 ,  C23C16/52 ,  C30B29/40 ,  H01L21/205 ,  H01S5/00 ,  H01S5/028 ,  H01S5/183 ,  H01S5/187 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method by which a film having a desired thickness can be grown in real time by using a laser beam having the same wavelength as a Bragg reflection film has. SOLUTION: After a plurality of buffer layers are formed on a semiconductor substrate, first and second epitaxial layers are grown on the buffer layers. The growth of the first and second epitaxial layers is continuously measured by using a laser beam having the same wavelength as the reflection wavelength of a Bragg reflection film and the period until the layers grow to the thicknesses of 1/4 wavelength is decided. Since the thickness of the Bragg reflection film grown thereafter is controlled based on the decided growing period, the epitaxial layers can be grown uniformly.