公开(公告)号：JPH09181083A

公开(公告)日：1997-07-11

申请号：JP21554296

申请日：1996-08-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIYUUHON RII ,  JINHIYOO RII ,  JIYONSUN RIYUU

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/70 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To eliminate a step of defining a base electrode from a structure of an existing pillar type bipolar transistor to minimize a parasitic capacitance of the base electrode. SOLUTION: First and second pillars 100A and 100B formed within first and second trenches 62A and 62B are used as active and collector regions respectively, the trenches 62A and 62B are formed at their bottoms with impurity layers 63 of a second conduction type having a high concentration as collector layers. In the first pillar, a base layer 66 and an emitter layer 72 are sequentially formed. Further formed within the first trench 62A is a base contact electrode 68 which is connected to the base layer 66. Impurities of the second conduction type are implanted to form a collector contact electrode 65.