公开(公告)号：JPH09162200A

公开(公告)日：1997-06-20

申请号：JP21379996

申请日：1996-08-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHIYANSEOOKU RII ,  MINGUN KIMU ,  JIYONRAMU RII ,  KUWANYUI PIYUN ,  HIYONMUU PAAKU

IPC: H01L29/00 ,  H01L21/338 ,  H01L29/772 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To predict the high frequency noise characteristic of the change in the drain current by representing the change in the characteristic only with a fixed noise temp. independent of the drain current and the gradient of the equivalent noise conductance to the drain current. SOLUTION: The level of an input end noise voltage source is represented with the noise temp. of a gate intrinsic resistance and that of an output end noise current source represented with the drain equivalent noise conductance. The noise temp. of the gate intrinsic resistance is given by parameters represented with the gradient of the noise temp. to the drain current and the equivalent noise given by parameters represented with the equivalent noise conductance at drain current zero and gradient of the equivalent noise conductance to the drain current.