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公开(公告)号：JPH08153908A
公开(公告)日：1996-06-11
申请号：JP30790294
申请日：1994-12-12
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： JO MASAHIRO , SEI KENYON
Abstract: PURPOSE: To provide a superconducting FET, in which crystal grain boundary formed between superconducting layers, having the orientational azimuths of different crystals are used as a channel. CONSTITUTION: Since a gate electrode 70c is formed just above a crystal grain boundary 40c, the flowing of a current between a source and a drain can be controlled at voltage applied through a gate insulating layer 60. Since the crystal grain boundaries acting on an oxide single-crystal substrate at lower cost as the channel can be formed without using an expensive twin crystalline substrate, a high-temperature superconducting FET can be manufactured economically.
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公开(公告)号：JPH08148729A
公开(公告)日：1996-06-07
申请号：JP29744094
申请日：1994-11-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SEI KENYON , JO MASAHIRO
Abstract: PURPOSE: To provide the manufacture of a thick superconducting field-effect transistor having a superconducting channel. CONSTITUTION: A template layer 32 and a YBa2 Cu3 O7-x layer 34 are formed successively onto the surface of the crystal substrate 30 of an oxide. A part of the YBa2 Cu3 O7-x layer 34 is removed (an opening section 35), and the layer 32 is exposed. The surfaces are covered with a YBa2 Cu3 O7-x channel layer 36 in thickness of 60-100 mm. An SrTiO3 protective layer 38 and an SrTiO3 insulating layer 40 are formed successively onto the channel layer 36. Parts of the insulation layer 40 and the protective layer 38 are removed by dry etching, and parts of the channel layer 36 are exposed. Source/drain electrodes 44, 46 are formed onto the surface of the cannel layer 36. A gate electrode 42 is formed simultaneously onto the insulating layer 40 in the opening section 35. Accordingly, the productivity and the characteristics of the superconducting FET are improved.
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