公开(公告)号：JPH08148729A

公开(公告)日：1996-06-07

申请号：JP29744094

申请日：1994-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SEI KENYON ,  JO MASAHIRO

IPC: H01L39/22 ,  H01L39/02 ,  H01L39/14 ,  H01L39/24

Abstract: PURPOSE: To provide the manufacture of a thick superconducting field-effect transistor having a superconducting channel. CONSTITUTION: A template layer 32 and a YBa2 Cu3 O7-x layer 34 are formed successively onto the surface of the crystal substrate 30 of an oxide. A part of the YBa2 Cu3 O7-x layer 34 is removed (an opening section 35), and the layer 32 is exposed. The surfaces are covered with a YBa2 Cu3 O7-x channel layer 36 in thickness of 60-100 mm. An SrTiO3 protective layer 38 and an SrTiO3 insulating layer 40 are formed successively onto the channel layer 36. Parts of the insulation layer 40 and the protective layer 38 are removed by dry etching, and parts of the channel layer 36 are exposed. Source/drain electrodes 44, 46 are formed onto the surface of the cannel layer 36. A gate electrode 42 is formed simultaneously onto the insulating layer 40 in the opening section 35. Accordingly, the productivity and the characteristics of the superconducting FET are improved.

公开(公告)号：JPH10190077A

公开(公告)日：1998-07-21

申请号：JP25945297

申请日：1997-08-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JO SEIDAI ,  SEI KENYON

IPC: C01G1/00 ,  C01G3/00 ,  C30B29/22 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To form an a-axis oriented YBCO high temperature superconductive thin film by depositing an a-axis oriented superconductive thin film at a high temperature of a substrate for irradiation of pulse laser with rapid repetition rate in a target surface of a superconductive sintering body. SOLUTION: Vacuum degree of a vacuum deposition chamber 9 is held at a pressure of 10 Torr by using a turbo-molecular pump 10. Then, a substrate 2 is heated by a substrate heater 3 and a temperature of the substrate 2 is raised. Furthermore, oxygen of high purity is injected into the vacuum deposition chamber 9 through a gas supply nozzle 4 and is held between 100mTorr and 300mTorr. Then, a pulse laser beam 6 is applied to a surface of a target 1 at an angle of 45 deg. from outside the vacuum deposition chamber 9 at a repetition rate of 10 to 100Hz, and a plasma is generated. Then, an a-axis oriented YBa2 Cu3 O7-x superconductive thin film 12 is deposited so that it reaches a surface of the oxide single crystal substrate 2.

公开(公告)号：JPH08153908A

公开(公告)日：1996-06-11

申请号：JP30790294

申请日：1994-12-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JO MASAHIRO ,  SEI KENYON

IPC: H01L39/00 ,  H01L29/78 ,  H01L39/22 ,  H01L39/24

Abstract: PURPOSE: To provide a superconducting FET, in which crystal grain boundary formed between superconducting layers, having the orientational azimuths of different crystals are used as a channel. CONSTITUTION: Since a gate electrode 70c is formed just above a crystal grain boundary 40c, the flowing of a current between a source and a drain can be controlled at voltage applied through a gate insulating layer 60. Since the crystal grain boundaries acting on an oxide single-crystal substrate at lower cost as the channel can be formed without using an expensive twin crystalline substrate, a high-temperature superconducting FET can be manufactured economically.