公开(公告)号：JPH10308526A

公开(公告)日：1998-11-17

申请号：JP23184697

申请日：1997-08-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GYUNG-OK ,  RO TOKAN

IPC: H01L29/68 ,  H01L29/06 ,  H01L31/00 ,  H01L31/0264 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/11 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To make it possible to decrease dark current by constituting the double barrier structure of a spacer layer and a resonance tunneling, a blocking barrier layer for electrons and a potential-change absorbing layer that is not doped at a corrector barrier layer between a base and a collector. SOLUTION: The movement of the emitter-layer electrons by resonance tunneling is started in the array assembling structure at a quantum point by an emitter-base voltage. The transition of the electrons stored in the array assembling structure at the quantum point to an exciting level is started by the absorption of infrared rays. At this time, the electrons, which are transitted to the exciting level, pass through a potential-change absorption layer 40 and emits thermions to a base region. Of the electrons passed through a base layer 36, the resonance tunnelled electons are selected through a quantum binding level of the resonance tunnelled structure, which is composed of a quantum barrier layer 32 on the side of a collector, a quantum well layer 33 and a quantum barrier layer 34, and the electrons reach a collector layer 20.