公开(公告)号：JPH10144910A

公开(公告)日：1998-05-29

申请号：JP23268697

申请日：1997-08-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RO TOKAN ,  KIN KEIGYOKU

IPC: H01L29/68 ,  H01L29/76

Abstract: PROBLEM TO BE SOLVED: To improve performances of a heterojunction hot electron device such as an increased current density and reduced transition time by introducing into its base layer an InAs layer with a V-shaped conduction band caused by a gradient composition, and by reducing the scattering phenomenon of electrons. SOLUTION: A hot electron device has a substrate 1 with a (100) lattice structure, a conductive collector layer 2 formed in a selected region on the substrate 1, a collector barrier layer 3 formed in a selected region on the collector layer 2, a conductive base layer 4 formed on the collector barrier layer 3, a buffer layer 5 formed in a selected region on the conductive base layer 4, an emitter barrier layer 6 formed on the buffer layer 5, and a conductive emitter layer 7 formed on the emitter barrier layer 6. The composition of the base layer 4 is varied so that it starts from the composition subjected to the lattice matching with the collector barrier layer 6, and the conduction band of the base layer 4 reaches a minimum value in the intermediate depth of the base layer 4.

公开(公告)号：JPH10190014A

公开(公告)日：1998-07-21

申请号：JP23537897

申请日：1997-08-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KEIGYOKU ,  RO TOKAN

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To improve resonance tunneling effects, reduce electric consumption due to high peak current increase and low operation voltage at a room temperature and increase operation speed by providing an asymmetrical combination that gradually reduces the width of a quantum well layer by gradually increasing the width of a quantum barrier layer and then gradually reducing it. SOLUTION: A structure is provided by subsequently stacking a conductive collector 7, a third quantum barrier layer 6, a second quantum well layer 5, a second quantum barrier layer 4, a first quantum well layer 3, a first quantum barrier layer 2 and a conductive emitter 1 on the upper part of a substrate 8. The structure is an asymmetrical combination wherein the width of the quantum barrier layer gradually increases and then gradually reduces and the width of the quantum well layer gradually reduces. With electrostatic capacity reduction by a thin outer barrier layer and an arrangement with Stark shift at a quantum bound level having low energy, resonance tunneling effects are increased and a low peak voltage and increased peak current are induced.

公开(公告)号：JPH10308526A

公开(公告)日：1998-11-17

申请号：JP23184697

申请日：1997-08-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM GYUNG-OK ,  RO TOKAN

IPC: H01L29/68 ,  H01L29/06 ,  H01L31/00 ,  H01L31/0264 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/11 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To make it possible to decrease dark current by constituting the double barrier structure of a spacer layer and a resonance tunneling, a blocking barrier layer for electrons and a potential-change absorbing layer that is not doped at a corrector barrier layer between a base and a collector. SOLUTION: The movement of the emitter-layer electrons by resonance tunneling is started in the array assembling structure at a quantum point by an emitter-base voltage. The transition of the electrons stored in the array assembling structure at the quantum point to an exciting level is started by the absorption of infrared rays. At this time, the electrons, which are transitted to the exciting level, pass through a potential-change absorption layer 40 and emits thermions to a base region. Of the electrons passed through a base layer 36, the resonance tunnelled electons are selected through a quantum binding level of the resonance tunnelled structure, which is composed of a quantum barrier layer 32 on the side of a collector, a quantum well layer 33 and a quantum barrier layer 34, and the electrons reach a collector layer 20.

公开(公告)号：JPH10173206A

公开(公告)日：1998-06-26

申请号：JP18536197

申请日：1997-07-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KEIGYOKU ,  RO TOKAN

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To obtain a resonant tunneling electronic device which can operate at a high speed by constituting the element in such an asymmetrical combinational structure that the heights of quantum barrier layers are gradually decreased after they are gradually increased and the widths of quantum well layers which provide quantum binding states of electrons are gradually increased or decreased. SOLUTION: A resonant tunnel electronic device is constituted by successively forming a conductive collector C7, a third quantum barrier layer 6, a second quantum well layer 5, a second quantum barrier layer 4, a first quantum well layer 3, a first quantum barrier layer 2, and a conductive emitter E1 on a substrate 8 in such an asymmetrical combinational structure that the heights of the quantum barrier layers are gradually decreased after they are gradually increased and, at the same time, the widths of the quantum well layers for electrons are gradually increased. Therefore, the speed index of the electronic element can be improved, because a peak voltage can be realized by reducing the capacitance of the element and increasing the resonant tunneling effect of electrons.