公开(公告)号：FI121962B

公开(公告)日：2011-06-30

申请号：FI19991732

申请日：1999-08-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  KIM YONG-SHIN ,  PARK SANG-HEE ,  CHO KYOUNG-IK ,  MA DONG-SUNG

IPC: G09F13/20 ,  C09K11/00 ,  C09K11/56 ,  C09K11/88 ,  C23C20060101 ,  C23C16/30 ,  C23C16/48 ,  H01L21/205 ,  H01L21/365 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14

Abstract: PURPOSE: A process for forming a PbX(X=S or Se) film using an atom layer deposition method and a chemical vapor deposition method and method for making a phosphor by adding PbX to the base material of CaS, CaSe, SrS, SrSe, ZnS, ZnSe, BaS, BaSe, MgS, and MgSe are provided which can produce the phosphor having good color intensity and luminance and reduce the cost of production. CONSTITUTION: In the manufacturing method of a PbX(X=S or Se) thin film, the film is formed by reacting a Pb-precursor and H2X(X=S or Se) using an organometal compound in which Pb is covalent-bonded with a functional group at 100-450°C. The product exhibits a luminance value of above 100 cd/m¬2 at AC-60 Hz. The phosphor having good color intensity and luminance is manufactured by adding a Pb ¬2+ ion to the base material selectively. The process can obtain excellent characteristics in reproducibility and uniformity and reduce the cost of production.

公开(公告)号：CA2313336A1

公开(公告)日：2001-01-05

申请号：CA2313336

申请日：2000-07-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  MA DONG-SUNG ,  PARK SANG-HEE ,  KIM YONG-SHIN ,  CHO KYOUNG-IK

IPC: C09K11/56 ,  H05B33/14

Abstract: There is provided for a method for fabricating a phosphor including host material regions to accelerate electrons and light-emitting regions containing light-emitting center ion. In the present invention, the phosphor is manufactured by several ten to several thousand repetitions of host material growth reactions and growth reactions of light-emitting region separately, in turn. Wherein the metalorganic compound including Pb covalent-bonded to organic functional group is used as a Pb-precursor and the Pb-precursor is reacted with H2X (X = S or Se), thereby, PbX being added into the host material. By this, the method for fabricating the phosphor in accordance with the present invention provides the phosphor exhibiting high luminance and high pure color. There are described a method for fabricating PbX (X - S or Se) and a method for fabricating an electroluminescent device including the phosphor. 50

公开(公告)号：CA2313336C

公开(公告)日：2012-09-25

申请号：CA2313336

申请日：2000-07-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  KIM YONG-SHIN ,  PARK SANG-HEE ,  CHO KYOUNG-IK ,  MA DONG-SUNG

IPC: C09K11/56 ,  H05B33/14

Abstract: There is provided for a method for fabricating a phosphor including host material regions to accelerate electrons and light-emitting regions containing light-emitting center ion. In the present invention, the phosphor is manufactured by several ten to several thousand repetitions of host material growth reactions and growth reactions of light-emitting region separately, in turn. Wherein the metalorganic compound including Pb covalent-bonded to organic functional group is used as a Pb-precursor and the Pb-precursor is reacted with H2X (X = S or Se), thereby, PbX being added into the host material. By this, the method for fabricating the phosphor in accordance with the present invention provides the phosphor exhibiting high luminance and high pure color. There are described a method for fabricating PbX (X - S or Se) and a method for fabricating an electroluminescent device including the phosphor. 50

公开(公告)号：FI19991732A

公开(公告)日：2000-02-14

申请号：FI19991732

申请日：1999-08-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  KIM YONG-SHIN ,  PARK SANG-HEE ,  CHO KYOUNG-IK ,  MA DONG-SUNG

IPC: G09F13/20 ,  C09K11/00 ,  C09K11/56 ,  C09K11/88 ,  C23C20060101 ,  C23C16/30 ,  C23C16/48 ,  H01L21/205 ,  H01L21/365 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  C23C

Abstract: PURPOSE: A process for forming a PbX(X=S or Se) film using an atom layer deposition method and a chemical vapor deposition method and method for making a phosphor by adding PbX to the base material of CaS, CaSe, SrS, SrSe, ZnS, ZnSe, BaS, BaSe, MgS, and MgSe are provided which can produce the phosphor having good color intensity and luminance and reduce the cost of production. CONSTITUTION: In the manufacturing method of a PbX(X=S or Se) thin film, the film is formed by reacting a Pb-precursor and H2X(X=S or Se) using an organometal compound in which Pb is covalent-bonded with a functional group at 100-450°C. The product exhibits a luminance value of above 100 cd/m¬2 at AC-60 Hz. The phosphor having good color intensity and luminance is manufactured by adding a Pb ¬2+ ion to the base material selectively. The process can obtain excellent characteristics in reproducibility and uniformity and reduce the cost of production.