公开(公告)号：JPH11233727A

公开(公告)日：1999-08-27

申请号：JP30889698

申请日：1998-10-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE KOSHU ,  LEE JIN-HYO ,  RYU KENKEI ,  KIN FUYU ,  NAM KI-SU

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve characteristics and cost performance of a silicon MMIC (monolithic microwave integrated circuit) by simultaneously integrating a passive element to a silicon substrate. SOLUTION: This inductor comprises two or more trenches 17 arranged on a silicon substrate 13 located at the lower end part of an inductor metal wire, insulating film 18 surrounding the trenches 17, non-impurity doped polycrystalline silicon area 20 filling the inside of the trenches surrounded by insulating film, insulating film 15 evaporated to the upper part of polycrystalline silicon and the entire part of substrate, a first metal line 12 of inductor formed to the predetermined area at the upper part of the insulating film, an insulating film 16 evaporated to the entire part of the first metal line and substrate, via holes 14 formed to the predetermined areas of the upper part of the first metal line through the predetermined area of the insulating film and a second metal line 11 coupled with the first metal line 12 and is arranged on the entire surface of the substrate.