公开(公告)号：JPH11261066A

公开(公告)日：1999-09-24

申请号：JP34059598

申请日：1998-11-30

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI DAIU ,  RO TAIBUN ,  KU JIN-KUN ,  KIM JONG-DAE ,  KIN SOKI ,  NAM KI-SU

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To drop yield voltage and ON-resistance, by extending a gate electrode in a lateral direction to a part of the upper side of a field insulating film from a gate area along the upper side of the center of a drift area, and extending a source electrode to a part of the field insulating film of the upper side of the drift area from a source area. SOLUTION: The gate electrode 7 of an electric element has a gate field board structure extended to a part of a field insulating film 3 through the center of the upper side of an n-type drift area 4 from a gate area in a lateral direction. A source electrode 11 has a field board structure extended to a part of the interlayer insulating film 10 of the upper side of the n-type drift area 4 from a source area. Thus, a depletion layer in the drift area 4 at the time of an operation changes by drain voltage and gate voltage. Yield voltage is boosted by RESURF(reduced surface field) effect in the drift area given by a source field board. Then, ON-resistance is reduced by the reduction of the depletion layer by the gate field board.

公开(公告)号：JPH11233727A

公开(公告)日：1999-08-27

申请号：JP30889698

申请日：1998-10-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE KOSHU ,  LEE JIN-HYO ,  RYU KENKEI ,  KIN FUYU ,  NAM KI-SU

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve characteristics and cost performance of a silicon MMIC (monolithic microwave integrated circuit) by simultaneously integrating a passive element to a silicon substrate. SOLUTION: This inductor comprises two or more trenches 17 arranged on a silicon substrate 13 located at the lower end part of an inductor metal wire, insulating film 18 surrounding the trenches 17, non-impurity doped polycrystalline silicon area 20 filling the inside of the trenches surrounded by insulating film, insulating film 15 evaporated to the upper part of polycrystalline silicon and the entire part of substrate, a first metal line 12 of inductor formed to the predetermined area at the upper part of the insulating film, an insulating film 16 evaporated to the entire part of the first metal line and substrate, via holes 14 formed to the predetermined areas of the upper part of the first metal line through the predetermined area of the insulating film and a second metal line 11 coupled with the first metal line 12 and is arranged on the entire surface of the substrate.

公开(公告)号：JPH1187310A

公开(公告)日：1999-03-30

申请号：JP20675098

申请日：1998-07-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SOKI ,  KIN SHODAI ,  KU JIN-KUN ,  NAM KI-SU ,  RI DAIU ,  RO TAIBUN

IPC: H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To enable formation of an oxide film pattern the lateral side of which has a gentle degree of inclination, by selectively etching a multilayered oxide layer, and thus forming an oxide film pattern with an inclined sidewall. SOLUTION: After a first oxide film 302a is evaporated on a semiconductor substrate 301, heat treatment is carried out at a temperature of 200-1400 deg.C, and a second oxide film 302b is evaporated on the first oxide film 302a. In this case, the evaporation temperature of the second oxide film 302b is lower than the evaporation temperature of the first oxide film 302a. The lateral inclination of first and second oxide film patterns to be formed after etching is very moderate. This form is made because the second oxide film 302b is etched faster than the first oxide film 302a. That is, the first oxide film 302a and the second oxide film 302b of heterojunction are different in structure and physical characteristics. When these oxide films are etched by using the same etchant, the sidewalls of these oxide films have a very gentle inclination because the etching ratios differ from each other.