公开(公告)号：JPH10144910A

公开(公告)日：1998-05-29

申请号：JP23268697

申请日：1997-08-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RO TOKAN ,  KIN KEIGYOKU

IPC: H01L29/68 ,  H01L29/76

Abstract: PROBLEM TO BE SOLVED: To improve performances of a heterojunction hot electron device such as an increased current density and reduced transition time by introducing into its base layer an InAs layer with a V-shaped conduction band caused by a gradient composition, and by reducing the scattering phenomenon of electrons. SOLUTION: A hot electron device has a substrate 1 with a (100) lattice structure, a conductive collector layer 2 formed in a selected region on the substrate 1, a collector barrier layer 3 formed in a selected region on the collector layer 2, a conductive base layer 4 formed on the collector barrier layer 3, a buffer layer 5 formed in a selected region on the conductive base layer 4, an emitter barrier layer 6 formed on the buffer layer 5, and a conductive emitter layer 7 formed on the emitter barrier layer 6. The composition of the base layer 4 is varied so that it starts from the composition subjected to the lattice matching with the collector barrier layer 6, and the conduction band of the base layer 4 reaches a minimum value in the intermediate depth of the base layer 4.

公开(公告)号：JPH10190014A

公开(公告)日：1998-07-21

申请号：JP23537897

申请日：1997-08-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KEIGYOKU ,  RO TOKAN

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To improve resonance tunneling effects, reduce electric consumption due to high peak current increase and low operation voltage at a room temperature and increase operation speed by providing an asymmetrical combination that gradually reduces the width of a quantum well layer by gradually increasing the width of a quantum barrier layer and then gradually reducing it. SOLUTION: A structure is provided by subsequently stacking a conductive collector 7, a third quantum barrier layer 6, a second quantum well layer 5, a second quantum barrier layer 4, a first quantum well layer 3, a first quantum barrier layer 2 and a conductive emitter 1 on the upper part of a substrate 8. The structure is an asymmetrical combination wherein the width of the quantum barrier layer gradually increases and then gradually reduces and the width of the quantum well layer gradually reduces. With electrostatic capacity reduction by a thin outer barrier layer and an arrangement with Stark shift at a quantum bound level having low energy, resonance tunneling effects are increased and a low peak voltage and increased peak current are induced.

公开(公告)号：JPH10173206A

公开(公告)日：1998-06-26

申请号：JP18536197

申请日：1997-07-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KEIGYOKU ,  RO TOKAN

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/88

Abstract: PROBLEM TO BE SOLVED: To obtain a resonant tunneling electronic device which can operate at a high speed by constituting the element in such an asymmetrical combinational structure that the heights of quantum barrier layers are gradually decreased after they are gradually increased and the widths of quantum well layers which provide quantum binding states of electrons are gradually increased or decreased. SOLUTION: A resonant tunnel electronic device is constituted by successively forming a conductive collector C7, a third quantum barrier layer 6, a second quantum well layer 5, a second quantum barrier layer 4, a first quantum well layer 3, a first quantum barrier layer 2, and a conductive emitter E1 on a substrate 8 in such an asymmetrical combinational structure that the heights of the quantum barrier layers are gradually decreased after they are gradually increased and, at the same time, the widths of the quantum well layers for electrons are gradually increased. Therefore, the speed index of the electronic element can be improved, because a peak voltage can be realized by reducing the capacitance of the element and increasing the resonant tunneling effect of electrons.