公开(公告)号：JPH08193813A

公开(公告)日：1996-07-30

申请号：JP31719894

申请日：1994-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI BAN ,  KIN TOKUHOU ,  HAKU MUNEYASU

IPC: G01B11/06 ,  C23C16/18 ,  C23C16/52 ,  H01L21/205

Abstract: PURPOSE: To accurately monitor the thickness and composition change of a crystal thin film when growing by causing a plurality of laser beams with different wavelengths to fall on the surface of a sample. CONSTITUTION: Each of two laser beams with mutually different wavelength emitted from laser beam generators 10 and 20 is caused to fall at an angle of 71 deg. in the vertical direction of the surface of a sample 2. Each of two beams reflected from the surface of the sample 2 is caused to fall on photo detectors 70 and 90 of the sample 2 by a filter 50. Therefore, the photo detector 70 detects light from the generator 10, and the photo detector 90 detects light from the generator 20. Signals from the photo detectors 60, 70, 80, and 90 are inputted to a computer 3 for comparison and analysis. That is, as the thickness of the growing thin film increases, the intensity (beam reflectivity) of the reflected beam changes due to interference. Thus, the growth speed of the thin film can be formed by analyzing the period of the interference pattern of each beam whose reflectivity changes.