公开(公告)号：JP2002124523A

公开(公告)日：2002-04-26

申请号：JP2001306688

申请日：2001-10-02

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JONG-LAM ,  KIM HAE-CHEON ,  MUN JAE-KYOUNG ,  PARK HYUNG-MOO

IPC: H01L29/812 ,  H01L21/338 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/45

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device by which the influx of the parasitic carrier at the interface between a substrate and a buffer layer to a channel layer can be prevented, and to provide a method for manufacturing the semiconductor device. SOLUTION: A first GaAs buffer layer 10A which is not doped is formed on a semi-insulating GaAs substrate 70, and a superlattice layer 80 is formed on the first GaAs buffer layer 10A. A second GaAs buffer layer 10B which is of the identical material with the first GaAs buffer layer 10A and is not doped is formed on the superlattice layer 80. A channel layer 20 is formed on the second GaAs buffer layer 10B, and a surface protecting film 30 is formed on the channel layer 20.