公开(公告)号：JPH07202349A

公开(公告)日：1995-08-04

申请号：JP30959694

申请日：1994-11-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KAIKEN ,  RI SAICHIN ,  KIN HOYUU

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To easily manufacture quantum wire laser diode by utilizing a molecular beam diffraction due to the shadow mask of a fine beam by MBE method. CONSTITUTION: On a GaAs substrate 1, an n -GaAs layer 2, an n -AlGaAs layers 3, an n -AlGaAs layers 4 are grown sequentially. Then, on the n -AlGaAs layers 4, a quantum wire structure is formed by utilizing a molecular beam diffraction. The distance between a shadow diffraction mask 6, which is used for that and a surface where a quantum wire 8, is generated is adjusted, and an i-AlAs layer 5 is grown with only AlAs for a mask to be the shadow diffraction mask 6 as a selective etching layer, and over it, the i-GaAs layer 6 which is to be a shadow diffraction mask is grown. For the i-GaAs layer 6 to be a diffraction mask, a photoresist layer 7 is coated on the i-GaAs layer 6. Thus, a quantum wire layer diode is manufacture easily.