公开(公告)号：JPH07115114A

公开(公告)日：1995-05-02

申请号：JP33175292

申请日：1992-12-11

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIYOU SEISHIYUN ,  KIN HOYUU ,  BAI KAZUNARI

IPC: H01L21/66

Abstract: PURPOSE: To read out the value of an energy gap more simply in a short time, by passing the light source having a constant wavelength through a test piece, and utilizing the obtained characteristics of the transmitted spectrum with an image processing system. CONSTITUTION: The light having a constant wavelength band (λ) with an energy gap(Eg) as the center is irradiated on a test piece. After the transmission function of λ=f(x) is obtained with an optical filter 5, the image is formed. The live image plane from an image input device 6 is stored in the frame memory of an image-signal processor 7. Then, scanning is performed along the side (x) for the image on a monitor. The scanned pixel value (x) and the Eg pixel value Xgap are compared. At the place where both values agree, the (x) coordinates of the pixel are read, and the λ gap is obtained from the algorithm of λ=f(x). Then, the relationship of gap (eV)=1.239/λ gap (μm) is used, and the value is converted into [eV] unit of the gap, and Eg is obtained.

公开(公告)号：JPH0620908A

公开(公告)日：1994-01-28

申请号：JP34484891

申请日：1991-12-26

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOUGEN ,  KIN JIYUNTAI ,  KIN HOYUU

IPC: B23Q1/00 ,  B23Q1/34 ,  B23Q1/36 ,  B23Q5/22 ,  B23Q5/28 ,  B23Q5/34 ,  G03F7/20 ,  G03F7/22 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  H01L41/09 ,  B23Q1/02

Abstract: PURPOSE: To eliminate measurement errors generated by an increase in height with changing displacement in a vertical direction by performing rotation in the vertical direction with the expansion displacement of an expansion part, enlarging the displacement and providing upper/lower direction and tilt driving device provided with a driving part for performing driving, linked with the rotation operation of a displacement-enlarging piece. CONSTITUTION: A roller 22 for upper/lower direction and tilt-driving transmits the enlarged displacement of an actuator to a vacuum chuck 6 in the vertical direction. Thus, it is turned to a driving point for the upper/lower direction and tilt driving device (A). Also, it is utilized as a guiding element for the rotation direction 27 of the roller for the upper/lower direction and tilt driving, and a roller supporting base 24 causes rotation movement along the structure of a circular V-groove 28. That is, the roller 22 for the upper/lower direction and tilt is rotated along the structure of the circular V-groove 28, and the rotation in a horizontal direction is enabled, without generating the displacement of the upper/lower direction and tilt.

公开(公告)号：JPH07202349A

公开(公告)日：1995-08-04

申请号：JP30959694

申请日：1994-11-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KAIKEN ,  RI SAICHIN ,  KIN HOYUU

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  H01L33/36 ,  H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To easily manufacture quantum wire laser diode by utilizing a molecular beam diffraction due to the shadow mask of a fine beam by MBE method. CONSTITUTION: On a GaAs substrate 1, an n -GaAs layer 2, an n -AlGaAs layers 3, an n -AlGaAs layers 4 are grown sequentially. Then, on the n -AlGaAs layers 4, a quantum wire structure is formed by utilizing a molecular beam diffraction. The distance between a shadow diffraction mask 6, which is used for that and a surface where a quantum wire 8, is generated is adjusted, and an i-AlAs layer 5 is grown with only AlAs for a mask to be the shadow diffraction mask 6 as a selective etching layer, and over it, the i-GaAs layer 6 which is to be a shadow diffraction mask is grown. For the i-GaAs layer 6 to be a diffraction mask, a photoresist layer 7 is coated on the i-GaAs layer 6. Thus, a quantum wire layer diode is manufacture easily.

公开(公告)号：JPH07201734A

公开(公告)日：1995-08-04

申请号：JP28490994

申请日：1994-11-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHIYOUSHIYOU ,  IN ZENJIN ,  KIN HOYUU ,  KIYOU SOUGEN

IPC: B82Y10/00 ,  B82Y40/00 ,  H01L21/20 ,  H01L21/203

Abstract: PURPOSE: To provide a stainless, no-potential heterojunction thin film by remov ing an oxide film and a different kind of thin film from a V-groove part by using a selective dry etching method and then removing the remaining film of oxide. CONSTITUTION: On the surface of a single-crystal thin film 1, a pattern is formed which includes lines repeated at specific intervals. Then etching is carried out to form grooves (V-grooves), which are repeated at intervals corresponding to the line pattern and is sectioned into a V-shape on the surface of the single- crystal thin film 1. On this surface, a different kind of thin film 2 in a V-groove pattern, having a grating mismatched with the thin film 1 is grown. The majority or the whole of grating mismatching potential is locally distributed because of the presence of the V-grooves. On the different kind of thin film 2, an oxide film 3 is vapor-deposited. Then the oxide film 3 and the different kind of thin film 2 at the V-groove part where the potentials are locally distributed are removed, and furthermore the oxide film 3 is removed.