公开(公告)号：JPH10107339A

公开(公告)日：1998-04-24

申请号：JP18239897

申请日：1997-07-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI SHOHYUN ,  CHO GENYOKU ,  RI SHOSHO ,  HAKU SHUTAI ,  RYU KEISHUN

IPC: H01L21/302 ,  B81C1/00 ,  H01L21/20 ,  H01L21/306 ,  H01L21/3065 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To prevent the sealing phenomenon of a silicon first structure, due to the elimination of a sacrifice layer by eliminating the sacrificial oxide layer by performing etching with a steam phase atmosphere that contains a steam of HF anhydride and methanol. SOLUTION: An oxide film 32 and a nitride film 33 are deposited on a silicon substrate 31, and a first polysilicon film 37 is deposited on the nitride film 33. Then, a first TOSE film pattern is formed on the first polysilicon film 37 as a sacrificial layer for providing a space for forming a fine structure, and a second polysilicon film 35 that is the material of the fine structure is deposited. Then, a second TOSE film is deposited as the mask of the second polysilicon film 35, the second polysilicon film 35 is subjected to dry etching selectively, a fine structure pattern is formed, and then a photoresist is eliminated. After that, it is arranged in a space that is filled with the steam of HF anhydride and methanol, and the exposed first TOSE film pattern is subjected to steam phase etching by the HF anhydride and methanol, thus forming a space 100.