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公开(公告)号：JPH07202533A
公开(公告)日：1995-08-04
申请号：JP28096994
申请日：1994-11-15
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIYOU KOUYON , RI SOURETSU , IN TETSUSHIYOKU
Abstract: PURPOSE: To provide a manufacture of a passive element for information communication, especially a band pass filter with an excellent performance in a high frequency area. CONSTITUTION: An epitaxial thin film 5 of an oxide high temperature superconducting body is formed. A band pass filter with YBCO/MgO/Cu/Au or a YBCO/LaA103/Cr/Cu/Au structure for high frequency is manufactured by applying a photo lithographic process and a mixed etching process to the thin film 5. As a result, precision and sharpness of a circuit pattern formed on a substrate is much improved.
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公开(公告)号：JPH08222907A
公开(公告)日：1996-08-30
申请号：JP29842795
申请日：1995-11-16
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIYOU KOUYON , RI SOURETSU , KAN SEKIKICHI , YASU TATSU
IPC: H01P1/203
Abstract: PROBLEM TO BE SOLVED: To obtain a filter available in a microwave communication system such as satellite communication and satellite broadcasting by constituting the filter of a high temperature, superconductive epitaxial thin film and a filter pattern adopting a parallel connection line system as a base. SOLUTION: A signal transmitting input terminal 1 is manufactured of a high temperature, superconductive microstrip line, and connected through a matching network with a parallel connection line. A filter pattern 2 is a Chebyshev type band-pass filter pattern for a microwave manufactured in a parallel connection system. This pattern 2 is optimized by performing simulation while using a microwave part designing tool. Then, at the time of design, the amplitude and length of the parallel connection line and a gap between the parallel connection lines are determined in consideration of the dielectric constant of a mono-crystal substrate 4 and the thickness of the high temperature conductive epitaxial thin film. Thus, the miniaturization and performance improvement of a microwave communication system can be attained.
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3.发明专利
公开(公告)号：JPH08237005A
公开(公告)日：1996-09-13
申请号：JP31697195
申请日：1995-12-05
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIYOU KOUYON , RI SOURETSU , KAN ISHIYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a high-temperature superconductive heptode low-pass filter for microwave which uses a filter pattern where a high-temperature superconductive epitaxial thin film and an open stub system are adopted. SOLUTION: A single crystal substrate 4 is provided, and a micro strip line using a high-temperature superconductive thin film is formed on one side of the upper surface of the single crystal substrate. An input end 1 which is connected to a connector for input and to which a microwave signal is inputted from the outside is formed, and a microstrip line which uses a high-temperature superconductive material is formed on the other side of the upper surface of the single crystal substrate 4. An output end 3 which is connected to a connector for output and outputs a filtered signal to the outside is formed, and a micro strip line which is formed so as to be able immediately connecting to both of the input end 1 and the output end 3 and consists of the same material as the high-temperature superconductive material of the input end 1 and the output end 3 is formed between the input end 1 and the output end 3 on the surface of the single crystal substrate 4, thus realizing an open stub system.
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公开(公告)号：JPH08186415A
公开(公告)日：1996-07-16
申请号：JP31705694
申请日：1994-12-20
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： RI SOURETSU , KIYOU KOUYON , KAN SEKIKICHI
Abstract: PURPOSE: To reduce the size by including a microwave use single crystal substrate, a coupling axis, a center conductor and a ground plane so as to improve the performance and excellence coping with frequency requirements. CONSTITUTION: An upper layer of a double mode disk resonator made of a high temperature superconducting material on a single crystal substrate 4 keeps a characteristic impedance of about 50 ohms, for example, and includes two coupling axes 1 of a microstrip form formed at an angle of 90 deg. and generating a double mode signal and includes a center conductor disk 3 formed at a prescribed interval 2 with respect to the axis 1 in which a square perturbation area 3a is formed. An interval 2 between the two axes 1 and the conductor 3 is selected so that resonance is produced between them. The axis 1 has a line width calculated and designed by the thickness and the dielectric constant of the substrate 4. When an output terminal use coupling axis is placed at a right angle to the input terminal coupling axis 1, the anti-resonance characteristic to the resonance is realized and the characteristic of the microwave resonator is improved.
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