公开(公告)号：JP2000036202A

公开(公告)日：2000-02-02

申请号：JP29726398

申请日：1998-10-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YU HEIKON ,  RI GENZAI ,  RYU SHOZEN

IPC: H01J29/04 ,  F21K2/08 ,  H01J29/18 ,  H01J31/12 ,  H05B33/10 ,  H05B33/12 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To provide an electroluminescent element with a ferroelectric electron emission source which secures stable high current even at a low operating voltage. SOLUTION: In this electroluminescent element, a first insulating layer 2 is provided on a semiconductor substrate 1, a first electrode 3 to which a specific pulse power is applied is provided on the first insulating layer 2, a ferroelectric layer 4 emitting electrons after the pulse power is applied thereto covers the first electrode 3, a second electrode 5 connected to a ground power is provided on the ferroelectric layer 4, an electroluminescent layer 6 which emits light excited by the electrons emitted from the ferroelectric layer 4 fills gaps in the second electrode 5, a second insulating layer 7 covers top of the second electrode 5 and the electroluminescent layer 6, and a third electrode 8 for accelerating the electrons injected into the electroluminescent layer 6 is provided on a top of the second insulating layer 7.

公开(公告)号：JPH10233402A

公开(公告)日：1998-09-02

申请号：JP22004397

申请日：1997-07-31

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HAKU SHUTAI ,  YOO HYUNG JOUN ,  RYU SHOZEN

IPC: H01L21/28 ,  H01L21/322 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To remove the pollutant in a contact hole for enhancing the crystalline characteristics, by a method wherein a contact hole is coated with a metal to be buried in the contact hole so that the gathering step may be performed during the advancement of respective stages forming a metallic wiring by patterning process or after the completion of the stages. SOLUTION: A P well 22 is formed on a semiconductor substrate 21, and after growing a field oxide film 24, a gate insulating film 25 and a gate electrode 23 are formed. Next, in the stage finishing the formation of an interlayer insulating film 26 and a definite contact hole, the substrate underside is implanted with ions so as to perform the true gathering step by the thin film evaporation under the stress such as silicon nitride, etc., extensional gathering doing the physical damage by scratching.rapping, etc., or using either the rapid heat treatment or an electric furnace. Later, the partition wall metal and wiring metal evaporation step is advanced to form the patterns. Through these procedures, the semiconductor substrate on the contact hole underside can be made into a non-defective region, thereby enabling the crystal to be restored to the single crystalline level.