公开(公告)号：JPH10247622A

公开(公告)日：1998-09-14

申请号：JP33492897

申请日：1997-11-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAI SOSHU ,  ZEN EICHIN ,  KIN HOYU ,  YOO HYUNG JOUN

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To make largest the contact between alignment signals, which are generated from an alignment mark, by a method wherein the alignment mark is formed on a membrane on the part of an alignment window and the membrane part excluded the alignment mark part is removed to form a through hole. SOLUTION: A selected part of an X-ray absorber is removed in an electron beam lithography process and a anisotropic etching process. Photoresists 130 are respectively applied on the upper part of a first X-ray transmission body 12 and the upper part of a second X-ray transmission body 13. The photoresists 130 are patterned in such a way that the transmission body 12 of the part of an alignment window 15R and the transmission body 13 of the parts of a main chip window 14R and the window 15R are exposed. Exposed parts of the transmission bodies 12 and 13 are removed using the photoresists 130 as etching masks. A mask substrate 11 is etched until the transmission body 12 is exposed using the patterned photoresists 130 as etching masks.