公开(公告)号：JPH10144971A

公开(公告)日：1998-05-29

申请号：JP18850997

申请日：1997-07-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JO SEIDAI ,  SEI KENYO

IPC: C30B29/22 ,  H01L21/3205 ,  H01L39/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To dissolve elastic stresses by depositing an amorphous insulating film gate to the top of a grain boundary channel, and depositing metallic electrodes to each top of the source of a superconducting film, the drain of a superconducting film, and the gate of an amorphous insulating film. SOLUTION: A high-temperature superconducting film is deposited onto a twin-crystal substrate 1, and a grain-boundary channel 5 is made at the grain boundary of the twin-crystal substrate 1. A superconducting film source 3 and a superconducting film drain 4 are made on both sides of this grain boundary channel 5. Then, an insulating film gate 6A is made on the top of the grain boundary channel 5, and further An metallic electrode pads 7A, 7B, and 7C are made severally on the gate 6A of an insulating film, the source 3 of a superconducting film, and the drain 4 of a superconducting film. Hereby, the occurrence of elastic stress of the superconducting film can be avoided.