公开(公告)号：JPH10190077A

公开(公告)日：1998-07-21

申请号：JP25945297

申请日：1997-08-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JO SEIDAI ,  SEI KENYON

IPC: C01G1/00 ,  C01G3/00 ,  C30B29/22 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To form an a-axis oriented YBCO high temperature superconductive thin film by depositing an a-axis oriented superconductive thin film at a high temperature of a substrate for irradiation of pulse laser with rapid repetition rate in a target surface of a superconductive sintering body. SOLUTION: Vacuum degree of a vacuum deposition chamber 9 is held at a pressure of 10 Torr by using a turbo-molecular pump 10. Then, a substrate 2 is heated by a substrate heater 3 and a temperature of the substrate 2 is raised. Furthermore, oxygen of high purity is injected into the vacuum deposition chamber 9 through a gas supply nozzle 4 and is held between 100mTorr and 300mTorr. Then, a pulse laser beam 6 is applied to a surface of a target 1 at an angle of 45 deg. from outside the vacuum deposition chamber 9 at a repetition rate of 10 to 100Hz, and a plasma is generated. Then, an a-axis oriented YBa2 Cu3 O7-x superconductive thin film 12 is deposited so that it reaches a surface of the oxide single crystal substrate 2.

公开(公告)号：JPH10144971A

公开(公告)日：1998-05-29

申请号：JP18850997

申请日：1997-07-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JO SEIDAI ,  SEI KENYO

IPC: C30B29/22 ,  H01L21/3205 ,  H01L39/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To dissolve elastic stresses by depositing an amorphous insulating film gate to the top of a grain boundary channel, and depositing metallic electrodes to each top of the source of a superconducting film, the drain of a superconducting film, and the gate of an amorphous insulating film. SOLUTION: A high-temperature superconducting film is deposited onto a twin-crystal substrate 1, and a grain-boundary channel 5 is made at the grain boundary of the twin-crystal substrate 1. A superconducting film source 3 and a superconducting film drain 4 are made on both sides of this grain boundary channel 5. Then, an insulating film gate 6A is made on the top of the grain boundary channel 5, and further An metallic electrode pads 7A, 7B, and 7C are made severally on the gate 6A of an insulating film, the source 3 of a superconducting film, and the drain 4 of a superconducting film. Hereby, the occurrence of elastic stress of the superconducting film can be avoided.