公开(公告)号：JPH09181324A

公开(公告)日：1997-07-11

申请号：JP19051096

申请日：1996-07-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOONHO SON ,  JIYONDEE KIMU ,  KIYONIKU CHIYOO

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To allow driving a polycrystalline silicon thin film transistor from a low voltage, to greatly shortern the production process time of the transistor and moreover, to make it possible to accomplish the whole production process of the transistor at a low temperature of 600 deg.C or lower. SOLUTION: An amorphous silicon thin film formed on an insulating substrate 61 is subjected to heat treatment in an oxygen atmosphere of normal pressures or higher to a high pressure of 100atm or lower and at a temperature of 600 deg.C or lower to form simultaneously a polycrystalline silicon film 62 and an oxide film 63 and after a gate electrode 64 is formed on the above oxide film 63, a gate 64, a source 65 and a drain 65 are formed by an implantation of dopant impurities and a dopant activation treatment and moreover, an interlayer oxide film 66 and a metal electrode 17 are formed.