公开(公告)号：JPH09181324A

公开(公告)日：1997-07-11

申请号：JP19051096

申请日：1996-07-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOONHO SON ,  JIYONDEE KIMU ,  KIYONIKU CHIYOO

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To allow driving a polycrystalline silicon thin film transistor from a low voltage, to greatly shortern the production process time of the transistor and moreover, to make it possible to accomplish the whole production process of the transistor at a low temperature of 600 deg.C or lower. SOLUTION: An amorphous silicon thin film formed on an insulating substrate 61 is subjected to heat treatment in an oxygen atmosphere of normal pressures or higher to a high pressure of 100atm or lower and at a temperature of 600 deg.C or lower to form simultaneously a polycrystalline silicon film 62 and an oxide film 63 and after a gate electrode 64 is formed on the above oxide film 63, a gate 64, a source 65 and a drain 65 are formed by an implantation of dopant impurities and a dopant activation treatment and moreover, an interlayer oxide film 66 and a metal electrode 17 are formed.

公开(公告)号：JPH09161992A

公开(公告)日：1997-06-20

申请号：JP23540296

申请日：1996-09-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIYONDE KIMU ,  YUUNHO SON ,  KIYONIKU CHIYOO

IPC: G01N22/00 ,  G01N21/73 ,  H05H1/00

Abstract: PROBLEM TO BE SOLVED: To measure the low plasma density and local plasma density with high spatial resolution. SOLUTION: This microwave resonance probe is provided with a 1/4-wavelength parallel transmission line 10; the first magnetic loop 11 located adjacent to the transmission line 10, connected to a coaxial cable 13, and vibrating the transmission line 10; the second magnetic loop 11 outputting the signal transmitted through the transmission line 10 to an external output device; and a Pyrex pipe. The prescribed frequency is applied to the transmission line 10, the occurrence of the resonance with this frequency is detected, and the occurring time and maintaining period of the resonance of the plasma generated from an electron element are measured, the measurement is repeated each time the applied frequency is changed, and the change of the plasma density at a given position is measured timewise.