公开(公告)号：JPH10173287A

公开(公告)日：1998-06-26

申请号：JP33012797

申请日：1997-12-01

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUN

Inventor： RI JUKI ,  BOKU KEIGEN ,  CHO GOSEI ,  CHO TOFUN ,  BOKU CHORUJUN

IPC: H01S5/00 ,  H01S3/0941 ,  H01S5/042 ,  H01S5/20 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To offset the unbalanced distribution of light in the longitudinal direction of a resonator by modulating the gain of an active area in the longitudinal direction in the same period as that of ion implantation by means of an ion- implanted area. SOLUTION: After ions are implanted into an area by using an insulating film and a photoresist as a mask and the photoresist and insulating film are removed, the front and rear surfaces of an element are coated with Si3 N4 insulating films and the insulting films are heat-treated at a high temperature so as to insulate the ion-implanted area. Then secondary crystal growth is performed in the order of a GaInP clad layer 17, a GaInAsP buffer layer 18, and GaAs 19 for forming ohmic contact. Then, after the insulating films are removed, the entire surfaces of etched ridges are coated with Si3 N4 , etc., and, after forming current injecting ports at the upper ends of the ridges, p-side electrodes 22 are formed by vapor deposition. Therefore, the gain of an active layer in the longitudinal direction can be modulated in the same period as that of the ion implantation by means of the ion-implanted area.