公开(公告)号：JPH09181090A

公开(公告)日：1997-07-11

申请号：JP26173796

申请日：1996-10-02

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： BIYUN RIYURU RIYUU ,  TE HIYON HAN ,  DOKU HO CHIYOO ,  SUU MIN RII ,  KUAN YUI PIYUN

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/165 ,  H01L29/732 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To reduce resistance and increase the maximum oscillation frequency by etching a first insulating film exposed on an emitter, forming a conductive layer, applying an insulating layer to form contact holes, and then implementing a metal wiring process. SOLUTION: Polycrystalline silicon 21 of negative or positive conductivity type is evaporated, and then impurities are implanted. A pattern is formed to obtain an emitter electrode. In order to form a base electrode and a collector electrode, a nitride film 16, metallic silicate 15, a nitride film 14 and silicon/ silicon germanium 13 above a N sinker 12 are sequentially removed by dry etching. Thus the metallic silicate film is used as a non-active base electrode. This reduces the resistance of transmission lines and increases the maximum oscillation frequency.