公开(公告)号：US20230257314A1

公开(公告)日：2023-08-17

申请号：US17980287

申请日：2022-11-03

Applicant: KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY

Inventor： Sung min LEE ,  Yoon Suk OH ,  Hyeong Jun KIM ,  Gyusang OH

IPC: C04B41/52 ,  C04B35/10 ,  C04B41/50 ,  C04B41/45 ,  C04B41/00 ,  C04B41/87 ,  C23C4/11

CPC classification number: C04B41/522 ,  C04B35/10 ,  C04B41/5045 ,  C04B41/5055 ,  C04B41/4543 ,  C04B41/4558 ,  C04B41/0072 ,  C04B41/87 ,  C23C4/11 ,  C04B2235/3217 ,  C04B2235/9669

Abstract: The present invention provides a plasma-resistant ceramic member, which includes a substrate and a ceramic coating layer formed on the substrate, in which the ceramic coating layer includes a lower layer consisting of an oxide formed on the substrate, and a surface layer in which an oxide composition component constituting the surface of the ceramic coating layer is surface-modified with a composition containing one or more anions selected from the group consisting of F− and Cl−, wherein the surface layer is a layer in which a raw material containing one or more anions selected from the group consisting of F− and Cl− is vaporized by heating and adsorbed to the surface of the ceramic coating layer, and thus modified with a composition containing one or more anions selected from the group consisting of F− and Cl−, and a method of manufacturing the same. According to the present invention, the plasma-resistant property, durability, and etching process stability of the ceramic member may be improved with low costs.

公开(公告)号：US20230215701A1

公开(公告)日：2023-07-06

申请号：US17978778

申请日：2022-11-01

Applicant: KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY

Inventor： Sung min LEE ,  Yoon Suk OH

IPC: H01J37/32 ,  H01J37/147 ,  C23C14/30 ,  C23C14/24 ,  C23C14/06 ,  C23C14/50 ,  C23C14/26 ,  C23C14/08

CPC classification number: H01J37/32477 ,  H01J37/1474 ,  C23C14/30 ,  C23C14/243 ,  C23C14/0694 ,  C23C14/505 ,  C23C14/26 ,  C23C14/083 ,  H01J2237/182 ,  H01J37/06

Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.