公开(公告)号：US10401320B2

公开(公告)日：2019-09-03

申请号：US15939721

申请日：2018-03-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young In Jhon ,  Young Tae Byun ,  Yong Tae Kim ,  Young Min Jhon

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L27/12

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

公开(公告)号：US08941931B2

公开(公告)日：2015-01-27

申请号：US13687098

申请日：2012-11-28

Applicant: Korea Institute of Science and Technology

Inventor： Seong Il Kim ,  Young Hwan Kim ,  Won Jun Choi ,  Yong Tae Kim

IPC: G02B9/00 ,  G02B3/08 ,  F24J2/08 ,  H01L31/052 ,  F24J2/46

CPC classification number: G02B3/08 ,  F24S23/00 ,  F24S23/31 ,  F24S40/52 ,  F24S50/80 ,  H01L31/054 ,  H01L31/0543 ,  Y02E10/43 ,  Y02E10/44 ,  Y02E10/52

Abstract: Provided is a concentration ratio controlling apparatus for concentration type solar cells. The concentration ratio controlling apparatus may include a first condensing unit to primarily concentrate quantity of light that is irradiated from a light source; a second condensing unit disposed between a lower portion of the first condensing unit and a solar cell to secondarily concentrate the quantity of light that has passed through the first condensing unit and thereby irradiate the secondarily concentrated light toward the solar cell; an adjustment unit disposed in an optical path between the light source and the first condensing unit to adjust a concentration area of the first condensing unit based on an external force, and thereby adjust the quantity of light that is concentrated by the first condensing unit; and a control unit to analyze an input signal and thereby supply a corresponding drive control signal to the adjustment unit.

Abstract translation: 提供了一种用于浓缩型太阳能电池的浓度比控制装置。 浓缩比控制装置可以包括：第一聚光单元，用于主要集中从光源照射的光量; 第二聚光单元，设置在第一聚光单元的下部和太阳能电池之间，以二次浓缩已经通过第一聚光单元的光量，从而将二次浓缩的光照射到太阳能电池; 调整单元，设置在光源和第一聚光单元之间的光路中，以基于外力调节第一聚光单元的浓度区域，从而调节由第一冷凝单元聚集的光量; 以及控制单元，用于分析输入信号，从而将相应的驱动控制信号提供给调节单元。

公开(公告)号：US20190072516A1

公开(公告)日：2019-03-07

申请号：US15939721

申请日：2018-03-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young In JHON ,  Young Tae BYUN ,  Yong Tae Kim ,  Young Min JHON

IPC: G01N27/414 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: G01N27/4146 ,  G01N27/414 ,  G01N27/4145 ,  H01L21/823462 ,  H01L27/0886 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/785

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

公开(公告)号：US10700278B2

公开(公告)日：2020-06-30

申请号：US16201295

申请日：2018-11-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon ,  Yong Tae Kim ,  Chun Keun Kim ,  Young-Hwan Kim ,  Minho Choi ,  Sehyun Kwon

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b  [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.

公开(公告)号：US08652876B2

公开(公告)日：2014-02-18

申请号：US13672943

申请日：2012-11-09

Applicant: Korea Institute of Science and Technology

Inventor： Young Hwan Kim ,  Yong Tae Kim ,  Jinn Il Choi

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: A method of manufacturing a phase-change random access memory includes: sequentially depositing an insulating layer, a first electrode layer, a phase change material layer, and a transfer material layer on a substrate; forming an array pattern in the transfer material layer using a laser interference lithography process; forming a metal layer on the transfer material layer having the array pattern formed; forming a second electrode layer by removing the transfer material layer; and forming a phase change layer by etching the phase change material layer using the second electrode layer as a mask. Accordingly, the manufacturing process of the phase-change random access memory may achieve an increase in speed and may be simplified.

Abstract translation: 制造相变随机存取存储器的方法包括：在衬底上依次沉积绝缘层，第一电极层，相变材料层和转移材料层; 使用激光干涉光刻工艺在转印材料层中形成阵列图案; 在形成有阵列图案的转印材料层上形成金属层; 通过去除转移材料层形成第二电极层; 以及通过使用第二电极层作为掩模蚀刻相变材料层来形成相变层。 因此，相变随机存取存储器的制造过程可以实现速度的提高并且可以被简化。