公开(公告)号：KR20120041304A

公开(公告)日：2012-05-02

申请号：KR20100102701

申请日：2010-10-21

Applicant: KOREA RES INST OF STANDARDS

Inventor： CHOI JAE HYUK ,  KIM JEE YOUNG ,  KIM YUN WON ,  CHOI HEON HWA ,  LEE KWANG CHEOL

IPC: C23F1/08 ,  C23F1/02 ,  C23F1/24 ,  C23F17/00

CPC classification number: C23F1/08 ,  C23F1/02 ,  C23F1/30 ,  C23F17/00

Abstract: PURPOSE: A cross section wet etching apparatus and method for protecting a superconducting metal circuit surface during the manufacture of a MEMS device using wet etching are provided to prevent damage to a superconductive metal of a MEMS substrate when depositing SiN on the MEMS substrate and to prevent direct exposure of a superconductive metal circuit on the MEMS device to an etching liquid. CONSTITUTION: A cross section wet etching apparatus for protecting a superconducting metal circuit surface comprises an etching protection plate(100) which is deposited with SiN or Si3N4 films on both sides thereof, a MEMS substrate(200) which is attached to one side of the etching protection plate to manufacture a device with a superconductive metal circuit, a first jig(300) which is attached to the other side of the MEMS substrate, and a second jig(400) which is coupled with the first jig by a fastening unit(310).

Abstract translation: 目的：提供一种用于在使用湿蚀刻制造MEMS器件期间保护超导金属电路表面的横截面湿法蚀刻装置和方法，以防止在MEMS衬底上沉积SiN时对MEMS衬底的超导金属的损坏，并防止 将超导金属电路直接暴露在MEMS器件上至蚀刻液体。 构成：用于保护超导金属电路表面的横截面湿式蚀刻装置包括：蚀刻保护板（100），其两侧沉积有SiN或Si 3 N 4膜; MEMS基板（200），其连接到 蚀刻保护板以制造具有超导金属电路的器件，附接到MEMS衬底的另一侧的第一夹具（300）和通过紧固单元与第一夹具联接的第二夹具（400） 310）。