公开(公告)号：JP2006224293A

公开(公告)日：2006-08-31

申请号：JP2005309882

申请日：2005-10-25

Applicant: KOREA RES INST OF STANDARDS &

Inventor： YUN YONG JU ,  AH CHIL SEONG ,  HA DONG HAN ,  PARK HYUNCHU ,  IN WANSHU ,  LEE KWANG-CHUL ,  PARK KOSHO

IPC: B82B3/00 ,  B81B5/00 ,  B81C99/00 ,  B82B1/00

Abstract: PROBLEM TO BE SOLVED: To provide a nanocomponent and a method for manufacturing a nanocomponent, a nanomachine or the like using the same. SOLUTION: The method for manufacturing a nanocomponent is carried out, in particular, by printing a grid on a substrate by photolithography or electron beam lithography, spraying a nanoplate aqueous solution to the grid portion to position a nanoplate, vapor depositing a protective film to a certain thickness on the substrate and on the upper part of the nanoplate placed on the substrate, etching the nanoplate with the vapor deposited protective film by focused ion beam or electron beam lithography, and removing a residual protective film by using a stripping agent for the protective film. The method for manufacturing a nanomachine or a nanostructure is carried out by moving and assembling the above nanocomponents with a nanoprobe. The invention provides a method for inexpensively and relatively easily manufacturing a nanocomponent of excellent quality and a method for realizing a nanomachine or the like by coupling the above nanocomponents and biomolecules or the like. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2002311042A

公开(公告)日：2002-10-23

申请号：JP2002017546

申请日：2002-01-25

Applicant: KOREA RES INST OF STANDARDS &

Inventor： SEONG DAE JIN ,  SHIN YONG-HYEON ,  KIM JUNG-HYUNG ,  LIM JONG YEON ,  JUNG KWANG HWA

IPC: G01P5/12 ,  G01F1/00 ,  G01F1/684 ,  G01F1/698 ,  G01M9/06 ,  G01P5/08

Abstract: PROBLEM TO BE SOLVED: To provide a measuring instrument for gas flow velocity distribution for visually displaying spatial distribution of a gas flow velocity. SOLUTION: The measuring instrument is so structured that a thin wire is arranged one-dimensionally or two-dimensionally by applying a principle of CTA(Constant Temperature Anemometer) and Pirani gauge for determining a flow velocity by quantity of an electric current flowing in order to maintain a metal thin wire at a constant temperature, then the flow velocity is measured by scanning vertically to a direction of the flow velocity and sensing an electric change of the thin wire on a scanned surface, the flow velocity is collected, and the flow velocity distribution is detected and is visualized. Therefore, quantitative distribution measurement of the gas flow velocity can be conducted and the instrument can be applied to a semiconductor manufacturing process requiring gas injection of equal distribution.

公开(公告)号：JP2000301527A

公开(公告)日：2000-10-31

申请号：JP2000094198

申请日：2000-03-30

Applicant: KOREA RES INST OF STANDARDS &

Inventor： KIN KYOKI ,  CHO SEISAI ,  KIN TOSHIN ,  YUN KEICHIN

IPC: F16L9/10 ,  B28B1/20 ,  B28B21/10 ,  B28B21/32 ,  C04B35/10 ,  C04B35/48

Abstract: PROBLEM TO BE SOLVED: To make the thickness constant through a simple process and thereby ensure the uniform fine texture and the linearity by specifying the solid content to form a slurry consisting of very weakly flocculated ceramic particles and further, removing large-size particles and lumps through centrifugal sedimentation to perform the centrifugal molding and sintering of the slurry. SOLUTION: Ceramic powder is dispersed in a liquid solvent and salt is added to form a slurry consisting of very weakly flocculated ceramic particles with about 5-20 vol.% solid content. Next, the slurry is made to sediment centrifugally so that large-size particles and particle lumps or impurities are removed. Further, this slurry is entered in a cylindrical mold to be centrifugally molded and a tube is formed in the mold. After that, the liquid solvent collected in the center of the mold is unloaded. The centrifugal molding and a stage associated therewith are repeated until the tube of desired thickness is formed. Finally, the tube is sintered. Thus it is possible to manufacture the ceramic tube which has uniform thickness and fine texture with ensured linearity, even when a special device is not used.

公开(公告)号：KR101576573B1

公开(公告)日：2015-12-10

申请号：KR20150074810

申请日：2015-05-28

Applicant: KOREA RES INST OF STANDARDS

Inventor： KWON HYUK SANG ,  SEO SUNG WON ,  KIM JEONG WON

IPC: H01L21/02 ,  H01L21/70

Abstract: 본발명은오존생성을이용한흑린박막제조방법및 이를위한제조장치에관한것으로서, 더욱상세하게는챔버내부에흑린을구비하고, 상기챔버내에자외선을조사하여오존을형성하는과정에서발생하는활성산소를이용하여흑린의식각을통해흑린박막을제조하는오존생성을이용한흑린박막제조방법및 이를위한제조장치에관한것이다.

Abstract translation: 本发明涉及通过使用臭氧产生制造黑色磷薄膜的方法及其制造装置，更具体地，涉及一种通过使用在室中制备黑色磷的臭氧产生来制造黑色磷薄膜的方法， 并通过在紫外线照射室内形成臭氧的过程中产生的活性氧来蚀刻黑色磷制造黑色磷薄膜及其制造装置。

公开(公告)号：KR20120048940A

公开(公告)日：2012-05-16

申请号：KR20100110439

申请日：2010-11-08

Applicant: KOREA RES INST OF STANDARDS

Inventor： YU HYUN UNG ,  PARK MIN GYU ,  CHOI SE BUM

IPC: G01N21/3563 ,  G01N1/28

Abstract: PURPOSE: A high-sensitive measuring method, a device for the same, a self-assembly monolayer used for the same in a process forming the self-assembly monolayer on a golden thin film using an infrared rays spectral device are provided to easily grow a self-assembly monolayer by forming a golden thin film less than 2 nano meter in both sides of a silicon. CONSTITUTION: A high-sensitive measuring method in a process forming the self-assembly monolayer on a golden thin film using an infrared rays spectral device is as follows. A silicon substrate in which golden thin film is formed in both surfaces is immersed in solution where organic molecules is melted so that a self-assembly monolayer is formed. The substrate where a monolayer is formed is taken out and installed in chamber where an infrared rays spectral device. Infrared ray is incident to one side end part of the silicon substrate where the monolayer is formed so that lights are successively reflected to both sides of the golden thin film. Lights projected by being reflected are incident to a detecting device by converting a progressive direction so that a light detection is performed.

Abstract translation: 目的：提供一种高灵敏度测量方法及其装置，使用红外线光谱装置在金色薄膜上形成自组装单层的工艺中使用的自组装单层，以便容易地生长 通过在硅的两面形成小于2纳米的金色薄膜，自组装单层。 构成：使用红外线光谱装置在金色薄膜上形成自组装单层的工艺中的高灵敏度测量方法如下。 将其中在两个表面上形成金色薄膜的硅衬底浸入有机分子熔化的溶液中，从而形成自组装单层。 将形成单层的基板取出并安装在红外线光谱装置的室内。 红外线入射到硅衬底的形成单层的一侧端部，使得光线被连续地反射到金色薄膜的两侧。 被反射的光通过转换逐行方向入射到检测装置，从而进行光检测。

公开(公告)号：KR20120041304A

公开(公告)日：2012-05-02

申请号：KR20100102701

申请日：2010-10-21

Applicant: KOREA RES INST OF STANDARDS

Inventor： CHOI JAE HYUK ,  KIM JEE YOUNG ,  KIM YUN WON ,  CHOI HEON HWA ,  LEE KWANG CHEOL

IPC: C23F1/08 ,  C23F1/02 ,  C23F1/24 ,  C23F17/00

CPC classification number: C23F1/08 ,  C23F1/02 ,  C23F1/30 ,  C23F17/00

Abstract: PURPOSE: A cross section wet etching apparatus and method for protecting a superconducting metal circuit surface during the manufacture of a MEMS device using wet etching are provided to prevent damage to a superconductive metal of a MEMS substrate when depositing SiN on the MEMS substrate and to prevent direct exposure of a superconductive metal circuit on the MEMS device to an etching liquid. CONSTITUTION: A cross section wet etching apparatus for protecting a superconducting metal circuit surface comprises an etching protection plate(100) which is deposited with SiN or Si3N4 films on both sides thereof, a MEMS substrate(200) which is attached to one side of the etching protection plate to manufacture a device with a superconductive metal circuit, a first jig(300) which is attached to the other side of the MEMS substrate, and a second jig(400) which is coupled with the first jig by a fastening unit(310).

Abstract translation: 目的：提供一种用于在使用湿蚀刻制造MEMS器件期间保护超导金属电路表面的横截面湿法蚀刻装置和方法，以防止在MEMS衬底上沉积SiN时对MEMS衬底的超导金属的损坏，并防止 将超导金属电路直接暴露在MEMS器件上至蚀刻液体。 构成：用于保护超导金属电路表面的横截面湿式蚀刻装置包括：蚀刻保护板（100），其两侧沉积有SiN或Si 3 N 4膜; MEMS基板（200），其连接到 蚀刻保护板以制造具有超导金属电路的器件，附接到MEMS衬底的另一侧的第一夹具（300）和通过紧固单元与第一夹具联接的第二夹具（400） 310）。

公开(公告)号：KR20090061175A

公开(公告)日：2009-06-16

申请号：KR20070128074

申请日：2007-12-11

Applicant: KOREA RES INST OF STANDARDS

Inventor： LEE TAE GEOL ,  MIN HYE GEUN ,  MOON DAE WON

IPC: G01N33/53 ,  G01N33/48

CPC classification number: G01N33/54346 ,  G01N33/54353 ,  H01J49/0004 ,  Y10T436/143333 ,  Y10T436/24

Abstract: A method for evaluating bond between materials through imaging of time-of-flight secondary ion mass spectrometry(TOF-SIMS) is provided to evaluate the bond between organic, inorganic or bio material with nanoparticle and perform quantitative and qualitative analysis. A method for evaluating bond between materials using time-of-flight secondary ion mass spectrometry(TOF-SIMS) comprises: a step of forming the pattern of nanoparticle which is bonded with bio, organic or inorganic material on a substrate; a step of measuring the ion detection pattern of bond between nanoparticle and bond material on the substrate using the TOF-SIMS; and a step of comparing detection pattern of bio, organic or inorganic material and nanoparticle and determining the bond between bio, organic or inorganic material with nanoparticle.

Abstract translation: 提供了通过飞行时间二次离子质谱（TOF-SIMS）成像来评估材料之间的结合的方法，以评估有机，无机或生物材料与纳米颗粒之间的键，并进行定量和定性分析。 使用飞行时间二次离子质谱法（TOF-SIMS）评估材料之间的结合的方法包括：在基材上形成与生物，有机或无机材料结合的纳米颗粒图案的步骤; 使用TOF-SIMS测量衬底上的纳米颗粒和键合材料之间的键的离子检测图案的步骤; 以及比较生物，有机或无机材料和纳米颗粒的检测模式并确定生物，有机或无机材料与纳米颗粒之间的键的步骤。

公开(公告)号：KR20090049847A

公开(公告)日：2009-05-19

申请号：KR20070116170

申请日：2007-11-14

Applicant: KOREA RES INST OF STANDARDS

Inventor： NAHM SEUNG HOON ,  JANG HOON SIK ,  LEE YOON HEE ,  KIM AM KEE

IPC: G01N3/08 ,  G01N3/00

CPC classification number: G01N3/08 ,  B82Y35/00 ,  G01N27/04 ,  G01N2203/0017 ,  G01N2203/028

Abstract: 본 발명은 나노와이어의 물성측정장치에 관한 것이다.
본 발명의 나노와이어의 물성측정장치는 나노와이어(10)의 일측 단부가 그리핑(gripping)되는 금속판(20); 나노와이어(10)의 타측 단부를 그리핑(gripping)하는 팁(30); 금속판(20) 또는 팁(30)을 이송시켜 나노와이어(10)를 인장시키는 매니퓰레이터; 금속판(20)과 상기 팁(30)이 어느 하나의 저항과 대체되어 연결되는 휘스톤 브리지 회로(40); 나노와이어(10)에 부착되어 인장 변형률을 측정하는 변형률 측정 게이지; 및 상기 휘스톤 브리지 회로(40)와 연결되어 나노와이어(10)의 저항, 전압 또는 전류의 변화를 측정하는 멀티미터(50); 를 포함하여 이루어진다.
본 발명의 반도체 나노와이어의 물성측정장치는, 나노와이어의 시편제작이 용이하며, 역학적 물성과 전기적 물성의 측정이 용이하고, 나노와이어의 기계적 및 전기적 물성 측정의 신뢰도를 향상시킬 수 있는 장점이 있다. 또한, 측정시에 필요한 제한적 조건에서도 쉽고 간단하게 나노와이어에 대해서 역학적 및 전기적 물성의 측정이 가능한 장점이 있다. 아울러, 시편에 전극을 형성하지 않고 전기적 물성 측정이 가능하므로 측정시간을 단축할 수 있는 장점이 있다.
나노와이어, 물성측정장치, 전자빔, 휘스톤 브리지

公开(公告)号：KR100762258B1

公开(公告)日：2007-10-01

申请号：KR20060039528

申请日：2006-05-02

Applicant: KOREA RES INST OF STANDARDS

Inventor： AH CHIL SEONG ,  YUN YONG JU ,  LEE JUN SUNG ,  PARK HYUNG JU ,  HA DONG HAN ,  YUN WAN SOO

IPC: H01L29/40

CPC classification number: G01R33/1269 ,  Y10T428/12389

Abstract: A method for manufacturing a nano gap electrode and a nano gap device manufactured by using the same are provided to manufacture uniform and reproductive nano gap electrodes by controlling the density and the reactive time of a reaction material. A method for manufacturing a nano gap electrode is characterized by dipping a substrate(1) having metal patterns(2) into a solution containing metal ions. And a reduced metal is grown on a surface of the metal pattern by a reducing agent included in the solution.

Abstract translation: 提供一种制造纳米间隙电极的方法和使用该方法制造的纳米间隙装置，以通过控制反应材料的密度和反应时间来制造均匀的和生殖的纳米间隙电极。 纳米间隙电极的制造方法的特征在于，将具有金属图案（2）的基板（1）浸渍在含有金属离子的溶液中。 并且还原金属通过溶液中包含的还原剂在金属图案的表面上生长。

公开(公告)号：KR100745158B1

公开(公告)日：2007-07-26

申请号：KR20060020375

申请日：2006-03-03

Applicant: KOREA RES INST OF STANDARDS

Inventor： KWON SUNG WON ,  JO YONG MYEONG

IPC: G01R19/03

CPC classification number: G01R19/03 ,  G05F1/561

Abstract: A device and a method for automatically measuring AC-DC(Alternating Current-Direct Current) current transfer difference of a TCC(Thermal Current Converter) are provided to prevent the leaking current generated due to stray capacity from flowing and to minimize influence of a drift of a current generator by measuring the output of two TCCs at the same time. A device(100) for automatically measuring AC-DC current transfer difference of a TCC is composed of a current generating unit(120) generating forward and reverse DC and AC current and supplying the generated current to a standard TCC(20) and a TCC(30) to be measured; a scan unit(140) changing the polarities of each output of the TCCs receiving the forward and reverse DC and AC current; a first voltmeter(150a) measuring the output of the standard TCC induced through the scan unit; a second voltmeter(150b) measuring the output of the TCC to be measured, induced through the scan unit; and a calculating unit computing a relative value of AC-DC current transfer difference of the TCC to be measured for the AC-DC current transfer difference of the standard TCC on the basis of a value measured by the first and second voltmeters if the forward and reverse DC and AC current is supplied. The standard TCC and the TCC to be measured are connected in series.

Abstract translation: 提供了一种用于自动测量TCC（热电转换器）的AC-DC（交流 - 直流）电流传递差异的装置和方法，以防止由杂散电容引起的泄漏电流流动并最小化漂移的影响 的电流发生器，同时测量两个TCC的输出。 用于自动测量TCC的AC-DC电流转移差的装置（100）由产生正向和反向DC和AC电流的电流产生单元（120）组成，并将产生的电流提供给标准TCC（20）和TCC （30）待测量; 扫描单元（140），改变接收正向和反向DC和AC电流的TCC的每个输出的极性; 测量通过扫描单元感应的标准TCC的输出的第一电压表（150a）; 第二电压表（150b），测量通过扫描单元感测的要测量的TCC的输出; 以及计算单元，基于由所述第一和第二电压计测量的值来计算所述标准TCC的AC-DC电流转移差异所要测量的TCC的AC-DC电流转移差的相对值，如果前进和 提供反向直流和交流电流。 要测量的标准TCC和TCC串联。