公开(公告)号：US11810701B2

公开(公告)日：2023-11-07

申请号：US17318613

申请日：2021-05-12

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chan Yong Hwang ,  Kyoung Woong Moon ,  Seung Mo Yang ,  Chang Soo Kim

IPC: H01F10/32 ,  H01F7/06 ,  G06T7/00 ,  G06F18/22

CPC classification number: H01F10/324 ,  G06F18/22 ,  G06T7/001 ,  H01F7/064 ,  G06T2207/30108

Abstract: The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

公开(公告)号：US20220246340A1

公开(公告)日：2022-08-04

申请号：US17318613

申请日：2021-05-12

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chan Yong Hwang ,  Kyoung Woong Moon ,  Seung Mo Yang ,  Chang Soo Kim

IPC: H01F10/32 ,  H01F7/06 ,  G06K9/62 ,  G06T7/00

Abstract: The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

公开(公告)号：US10937949B1

公开(公告)日：2021-03-02

申请号：US16654647

申请日：2019-10-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kyoung-Woong Moon ,  Chan Yong Hwang

IPC: H01L43/08 ,  H01L43/04

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

公开(公告)号：US20170345514A1

公开(公告)日：2017-11-30

申请号：US15606910

申请日：2017-05-26

Applicant: Korea Research Institute of Standards and Science

Inventor： Kyoung Woong Moon ,  Chan Yong Hwang

IPC: G11C19/08 ,  G11C11/48 ,  G11C11/14 ,  H01F10/06 ,  G11C11/02

CPC classification number: G11C19/0833 ,  G11B5/012 ,  G11B5/82 ,  G11B5/865 ,  G11C11/02 ,  G11C11/14 ,  G11C11/48 ,  H01F10/06 ,  H01F13/003

Abstract: A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.

公开(公告)号：US20230006130A1

公开(公告)日：2023-01-05

申请号：US17583478

申请日：2022-01-25

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Seung Mo Yang ,  Chan Yong Hwang ,  Kyoung Woong Moon

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: The present disclosure relates to an apparatus for generating, erasing, and moving a skyrmion in a magnetic thin film. The apparatus for generating, erasing, and moving the skyrmion may include: a first electrode to which a first voltage for generating and erasing the skyrmion is applied; a second electrode to which a second voltage for moving the generated skyrmion is applied; a free layer having one end connected to a ground and the other end connected to the second electrode; a pinned layer which is connected to the first electrode; and a barrier layer which is provided between the free layer and the pinned layer and includes a conducting path connecting the free layer and the pinned layer.

公开(公告)号：US11193988B2

公开(公告)日：2021-12-07

申请号：US16687213

申请日：2019-11-18

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE ,  KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  KOREA BASIC SCIENCE INSTITUTE

Inventor： Kyoung-Woong Moon ,  Chan Yong Hwang ,  Byoung-Chul Min ,  Seung-young Park

IPC: G01R33/05 ,  H01F10/30 ,  G01R33/12 ,  G01R33/00 ,  G01R33/032 ,  H01F10/32

Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

公开(公告)号：US20210050509A1

公开(公告)日：2021-02-18

申请号：US16654647

申请日：2019-10-16

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Kyoung-Woong Moon ,  Chan Yong Hwang

IPC: H01L43/08

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

公开(公告)号：US10026495B2

公开(公告)日：2018-07-17

申请号：US15606910

申请日：2017-05-26

Applicant: Korea Research Institute of Standards and Science

Inventor： Kyoung Woong Moon ,  Chan Yong Hwang

IPC: G11C19/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/48 ,  H01F10/06

Abstract: A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.