METHOD OF DETERMINING SURFACE ORIENTATION OF SINGLE CRYSTAL WAFER
    3.
    发明申请
    METHOD OF DETERMINING SURFACE ORIENTATION OF SINGLE CRYSTAL WAFER 有权
    确定单晶波的表面方位的方法

    公开(公告)号:US20150330918A1

    公开(公告)日:2015-11-19

    申请号:US14443026

    申请日:2013-05-31

    CPC classification number: G01N23/207 G01N2223/331 G01N2223/6116 H01L22/12

    Abstract: Provided is a method of determining a surface orientation of a single crystal wafer. The method of determining a surface orientation of a single crystal wafer using high resolution X-ray rocking curve measurement may determine a surface angle of the wafer and a direction of the surface angle using rocking curve measurement of a high resolution X-ray diffraction method and measuring a misalignment angle formed by a rotation axis of a measuring apparatus and a surface normal of the wafer and an orientation of the misalignment angle.

    Abstract translation: 提供了确定单晶晶片的表面取向的方法。 使用高分辨率X射线摇摆曲线测量来确定单晶晶片的表面取向的方法可以使用高分辨率X射线衍射方法的摇摆曲线测量来确定晶片的表面角度和表面角度的方向,以及 测量由测量装置的旋转轴和晶片的表面法线形成的不对准角以及不对准角的取向。

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