公开(公告)号：US10121658B2

公开(公告)日：2018-11-06

申请号：US15576664

申请日：2016-03-24

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Hyuksang Kwon ,  Jeong Won Kim ,  Eun Seong Lee

IPC: H01L21/02 ,  H01L21/428 ,  H01L21/205 ,  H01L29/24 ,  H01L29/34 ,  H01L29/786 ,  H01L31/032 ,  H01L33/26

Abstract: The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a method of fabricating a black phosphorus ultrathin film by forming the black phosphorous ultrathin film in a chamber by active oxygen and removing accompanying black phosphorus oxide film water. The black phosphorus ultrathin film has a surface that does not substantially have defects and is uniform in a large area, and has a surface roughness property of 1 nm or less, to represent a high application property to an optoelectronic device and a field effect transistor.

公开(公告)号：US10468604B2

公开(公告)日：2019-11-05

申请号：US15393173

申请日：2016-12-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon Kim ,  Songwoung Hong ,  Jeong Won Kim ,  Hyuksang Kwon

IPC: H01L21/02 ,  H01L51/00 ,  C01B25/02 ,  H01L29/70 ,  H01L29/66 ,  H01L29/861 ,  H01L29/24 ,  H01L51/42 ,  H01L51/05 ,  H01L29/778

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.