公开(公告)号：US10062799B2

公开(公告)日：2018-08-28

申请号：US14884644

申请日：2015-10-15

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon Kim ,  Kyung Joong Kim ,  Songwoung Hong

IPC: H01L31/00 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L31/074 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/035218 ,  H01L31/074 ,  H01L31/186 ,  H01L33/0058 ,  H01L33/06 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

公开(公告)号：US20170062646A1

公开(公告)日：2017-03-02

申请号：US14884644

申请日：2015-10-15

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon Kim ,  Kyung Joong Kim ,  Songwoung Hong

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/074 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L31/1804 ,  H01L31/035218 ,  H01L31/074 ,  H01L31/186 ,  H01L33/0058 ,  H01L33/06 ,  Y02E10/50

Abstract: Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

Abstract translation: 提供一种制造量子点光活性层的方法，包括：在硅衬底上交替地沉积含有导电杂质和含有过量硅的非晶硅化合物层和基于化学计量比的硅，以形成复合材料 多层; 并且对所述复合多层进行热处理以在与硅化合物相对应的矩阵中形成多个硅量子点，其中至少形成含有导电杂质的非晶硅层代替富硅化合物层， 以及使用上述方法制造的量子点光活性层。

公开(公告)号：US10468604B2

公开(公告)日：2019-11-05

申请号：US15393173

申请日：2016-12-28

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Ansoon Kim ,  Songwoung Hong ,  Jeong Won Kim ,  Hyuksang Kwon

IPC: H01L21/02 ,  H01L51/00 ,  C01B25/02 ,  H01L29/70 ,  H01L29/66 ,  H01L29/861 ,  H01L29/24 ,  H01L51/42 ,  H01L51/05 ,  H01L29/778

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.