Abstract:
Provided is a method of determining a surface orientation of a single crystal wafer. The method of determining a surface orientation of a single crystal wafer using high resolution X-ray rocking curve measurement may determine a surface angle of the wafer and a direction of the surface angle using rocking curve measurement of a high resolution X-ray diffraction method and measuring a misalignment angle formed by a rotation axis of a measuring apparatus and a surface normal of the wafer and an orientation of the misalignment angle.
Abstract:
Proposed are a wafer inspection apparatus and a method of inspecting a wafer using the wafer inspection apparatus. The proposed wafer inspection apparatus includes a horizontal magnetic field generation unit arranged proximate to a lateral surface of a wafer and forming a magnetic field in such a manner that lines of magnetic force propagate in a horizontal direction, a vertical magnetic field generation unit arranged under the wafer and generating a magnetic field in such a manner that lines of magnetic force propagate in a direction vertical to the wafer, an image measurement unit arranged over the wafer and measuring an image of the wafer, and a wafer movement stage moving the wafer in a first direction and a second direction.
Abstract:
Proposed are a wafer inspection apparatus and a method of inspecting a wafer using the wafer inspection apparatus. The proposed wafer inspection apparatus includes a horizontal magnetic field generation unit arranged proximate to a lateral surface of a wafer and forming a magnetic field in such a manner that lines of magnetic force propagate in a horizontal direction, a vertical magnetic field generation unit arranged under the wafer and generating a magnetic field in such a manner that lines of magnetic force propagate in a direction vertical to the wafer, an image measurement unit arranged over the wafer and measuring an image of the wafer, and a wafer movement stage moving the wafer in a first direction and a second direction.