公开(公告)号：US09678023B2

公开(公告)日：2017-06-13

申请号：US14443026

申请日：2013-05-31

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chang Soo Kim ,  Seok Min Bin

IPC: G01N23/207 ,  H01L21/66

CPC classification number: G01N23/207 ,  G01N2223/331 ,  G01N2223/6116 ,  H01L22/12

Abstract: Provided is a method of determining a surface orientation of a single crystal wafer. The method of determining a surface orientation of a single crystal wafer using high resolution X-ray rocking curve measurement may determine a surface angle of the wafer and a direction of the surface angle using rocking curve measurement of a high resolution X-ray diffraction method and measuring a misalignment angle formed by a rotation axis of a measuring apparatus and a surface normal of the wafer and an orientation of the misalignment angle.

公开(公告)号：US20150330918A1

公开(公告)日：2015-11-19

申请号：US14443026

申请日：2013-05-31

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： Chang Soo Kim ,  Seok Min Bin

IPC: G01N23/207

CPC classification number: G01N23/207 ,  G01N2223/331 ,  G01N2223/6116 ,  H01L22/12

Abstract: Provided is a method of determining a surface orientation of a single crystal wafer. The method of determining a surface orientation of a single crystal wafer using high resolution X-ray rocking curve measurement may determine a surface angle of the wafer and a direction of the surface angle using rocking curve measurement of a high resolution X-ray diffraction method and measuring a misalignment angle formed by a rotation axis of a measuring apparatus and a surface normal of the wafer and an orientation of the misalignment angle.

Abstract translation: 提供了确定单晶晶片的表面取向的方法。 使用高分辨率X射线摇摆曲线测量来确定单晶晶片的表面取向的方法可以使用高分辨率X射线衍射方法的摇摆曲线测量来确定晶片的表面角度和表面角度的方向，以及 测量由测量装置的旋转轴和晶片的表面法线形成的不对准角以及不对准角的取向。