公开(公告)号：US20140148014A1

公开(公告)日：2014-05-29

申请号：US14082823

申请日：2013-11-18

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

Inventor： ShinJae You ,  Jung-Hyung Kim ,  Yong-Hyung Shin ,  Dae-Jin Seong ,  Daewoong Kim

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/32568 ,  H01L21/02049

Abstract: A substrate processing apparatus and method includes a chamber, a remote plasma source outside the chamber to provide activated ammonia and activated hydrogen fluoride into the chamber, and a direct plasma source to provide ion energy to a substrate inside the chamber. The plasma source includes ground electrodes extending in a first direction on a first plane perpendicularly spaced apart from a plane on which the substrate is disposed and defined by the first direction and a second direction perpendicular to the first direction and power electrodes disposed between the ground electrodes, extending in the first direction parallel to each other and receiving power from an RF power source to generate plasma between adjacent ground electrodes. The activated ammonia and the activated hydrogen fluoride are supplied on the substrate through a space between the power electrode and the ground electrode.

Abstract translation: 基板处理装置和方法包括：腔室，室外的远程等离子体源，以将激活的氨和活化的氟化氢提供到腔室中，以及直接等离子体源，以向腔室内的基底提供离子能量。 等离子体源包括接地电极，该接地电极在垂直于第一平面间隔开的第一平面上延伸，该第一平面垂直于基板设置并由第一方向和垂直于第一方向的第二方向定义的平面间隔开，并且布置在接地电极 在第一方向上彼此平行延伸并且从RF电源接收功率以在相邻接地电极之间产生等离子体。 活性氨和活性氟化氢通过电力电极和接地电极之间的空间在基板上供应。