公开(公告)号：JPH11251618A

公开(公告)日：1999-09-17

申请号：JP37346498

申请日：1998-12-28

Applicant: KOREA TELECOMMUN

Inventor： KIM SEONG JUN ,  RI SHUKAN ,  SI SANG K ,  IN KYUNKUN ,  YO TOKUKO

IPC: G02B6/12 ,  H01L31/10 ,  H01L33/06 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide an waveguide photoelement having at least exceeding two positions of regions with dissimilar energy band gap quantum well layer and its manufacture. SOLUTION: An InGaAs cap layer laminated on a quantum well layer 13, whereon at least exceeding a pair of InGaAs and InP layer is laminated after the formation of an SiO2 coating layer, is annealed at high temperature so as to form a band gap energy conversing region wherein the energy band gap in a specific region of the InGaAs/InP quantum well layer 13 is converted. Through these procedures, an waveguide photo element having dissimilar energy band gap quantum well layer laser-oscillating in different wavelength can be manufactured.