公开(公告)号：US20250146169A1

公开(公告)日：2025-05-08

申请号：US18816567

申请日：2024-08-27

Applicant: Korea Institute of Ceramic Engineering and Technology

Inventor： Si Young BAE ,  Seong Min JEONG ,  Yun Ji SHIN ,  Tae Hun Gu ,  A Ran SHIN

IPC: C30B9/00 ,  C30B15/08 ,  C30B15/10 ,  C30B15/20 ,  C30B29/16

Abstract: The present invention relates to a method for growing a gallium oxide single crystal and an apparatus for growing a single crystal, and according to one aspect of the present invention, the method includes providing a gallium oxide raw material in a crucible containing iridium, injecting carbon dioxide so that a preset carbon dioxide partial pressure is formed to suppress the loss of iridium, melting the gallium oxide raw material provided in the crucible, and producing a gallium oxide single crystal from the melt.