Non-sintered mim capacitor and method of manufacturing the same
    3.
    发明专利
    Non-sintered mim capacitor and method of manufacturing the same 有权
    非烧结MIM电容器及其制造方法

    公开(公告)号:JP2011222923A

    公开(公告)日:2011-11-04

    申请号:JP2010107389

    申请日:2010-05-07

    Abstract: PROBLEM TO BE SOLVED: To disclose a non-sintered MIM capacitor and a method of manufacturing the same.SOLUTION: A method of manufacturing a non-sintered MIM capacitor includes the step of producing a lower metal-an insulator-an upper metal, where the insulator is a highly dielectric ceramic powder containing small powder, and large powder having an average particle size larger than that of the small powder, the step of preparing a ceramic-polymer composition containing polymer resin and solvent, the step of forming a ceramic-polymer membrane by applying the ceramic-polymer composition onto the lower metal, and the step of curing the polymer resin in the ceramic-polymer membrane thus formed and the capacitor is formed by a non-sintering method.

    Abstract translation: 要解决的问题:公开一种非烧结MIM电容器及其制造方法。 解决方案:制造非烧结MIM电容器的方法包括以下步骤:制造下金属绝缘体 - 上金属,其中绝缘体是含有小粉末的高介电陶瓷粉末,以及具有平均值的大粉末 粒径大于小粉末的粒径,制备含有聚合物树脂和溶剂的陶瓷 - 聚合物组合物的步骤,通过将陶瓷 - 聚合物组合物施加到下部金属上形成陶瓷 - 聚合物膜的步骤,以及步骤 固化由此形成的陶瓷聚合物膜中的聚合物树脂,并且通过非烧结方法形成电容器。 版权所有(C)2012,JPO&INPIT

    Forming method of plasma resistant oxyfluoride coating layer

    公开(公告)号:US12237153B2

    公开(公告)日:2025-02-25

    申请号:US17978778

    申请日:2022-11-01

    Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

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