公开(公告)号：US08084367B2

公开(公告)日：2011-12-27

申请号：US11752834

申请日：2007-05-23

Applicant: Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

Inventor： Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

IPC: H01L21/302

CPC classification number: H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract translation: 本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。

公开(公告)号：US08790470B2

公开(公告)日：2014-07-29

申请号：US13326940

申请日：2011-12-15

Applicant: Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

Inventor： Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

IPC: B08B3/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract translation: 本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。

公开(公告)号：US08889563B2

公开(公告)日：2014-11-18

申请号：US13024782

申请日：2011-02-10

Applicant: Kwon-Taek Lim

Inventor： Kwon-Taek Lim

IPC: H01L21/306 ,  B81C1/00 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B81C1/00928 ,  B81C2201/117

Abstract: An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

Abstract translation: 本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果， 在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。

公开(公告)号：US08585917B2

公开(公告)日：2013-11-19

申请号：US13326965

申请日：2011-12-15

Applicant: Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

Inventor： Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldorai Yuvaraj ,  Jae-Mok Jung

IPC: C03C15/00

CPC classification number: H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract translation: 本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。

公开(公告)号：US20120080059A1

公开(公告)日：2012-04-05

申请号：US13326965

申请日：2011-12-15

Applicant: Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldural Yuvaraj ,  Jae-Mok Jung

Inventor： Hyo-san Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Taek Lim ,  Ha-Soo Hwang ,  Haldural Yuvaraj ,  Jae-Mok Jung

IPC: B08B3/08

CPC classification number: H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract translation: 本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。