公开(公告)号：WO2006036820A3

公开(公告)日：2007-07-05

申请号：PCT/US2005034226

申请日：2005-09-23

Applicant: LAM RES CORP ,  CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

Inventor： CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

IPC: H01L21/3065 ,  C23C16/00 ,  C23F1/00

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32935

Abstract: A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured impedance value with an attribute of the process, if the measured impedance value is outside of a predefined impedance value envelope.

Abstract translation: 公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。 该方法包括将基板定位在等离子体处理室中。 该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。 该方法还包括获得在等离子体被击打之后存在的测量阻抗，当等离子体不存在时，所测量的阻抗值具有第一值，并且当存在等离子体时，获得与第一值不同的至少第二值。 该方法还包括将测量的阻抗值与该过程的属性相关联，如果测量的阻抗值在预定的阻抗值包络之外。

公开(公告)号：WO2006041656A3

公开(公告)日：2007-06-14

申请号：PCT/US2005034312

申请日：2005-09-23

Applicant: LAM RES CORP ,  CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

Inventor： CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

IPC: H01L21/3065 ,  H03H7/40

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32935

Abstract: A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured plasma frequency that exists after the plasma is struck, the measured plasma frequency value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured plasma frequency value with an attribute of the process, if the measured plasma frequency value is outside of a predefined plasma frequency value envelope.

Abstract translation: 公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。 该方法包括将基板定位在等离子体处理室中。 该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。 该方法还包括获得在等离子体被击打之后存在的测量等离子体频率，当等离子体不存在时测量的等离子体频率值具有第一值，并且当存在等离子体时，获得与第一值不同的至少第二值。 如果所测量的等离子体频率值在预定的等离子体频率值包络之外，该方法还包括将所测量的等离子体频率值与该过程的属性相关联。

公开(公告)号：WO2005060548A3

公开(公告)日：2006-02-23

申请号：PCT/US2004040267

申请日：2004-12-01

Applicant: LAM RES CORP ,  ANNAPRAGADA RAO ,  TAKESHITA KENJI

Inventor： ANNAPRAGADA RAO ,  TAKESHITA KENJI

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/76831 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

Abstract: A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

Abstract translation: 提供了在多孔低K电介质层中形成特征的方法。 将多孔低K电介质层放置在衬底上。 将图案化的光致抗蚀剂掩模放置在多孔低K电介质层上。 将特征蚀刻到多孔低K电介质层中。 在蚀刻特征之后，在特征上沉积保护层。 剥离图案化的光致抗蚀剂掩模，从而去除保护层的一部分，其中由保护层形成的保护壁保留在特征中。

公开(公告)号：WO2006036821A3

公开(公告)日：2007-02-01

申请号：PCT/US2005034227

申请日：2005-09-23

Applicant: LAM RES CORP ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH ,  CHENG CHIA CHENG

Inventor： GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH ,  CHENG CHIA CHENG

IPC: H01L21/30 ,  B44C1/22 ,  G01L21/30 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01J37/32935

Abstract: A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber (802). The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber (804). The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present (806). The method also includes correlating the measured self-bias voltage value with an attribute of the process (808), if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope (810,812).

Abstract translation: 公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。 该方法包括将衬底定位在等离子体处理室（802）中。 该方法还包括在衬底设置在等离子体处理室（804）内的同时在等离子体处理室内击打等离子体。 该方法还包括获得在等离子体被击打之后存在的测量的自偏压，当等离子体不存在时，所测量的自偏压值具有第一值，当等离子体为等离子体时，获得与第一值不同的第二值 现在（806）。 如果所测量的自偏压值超出预定义的自偏压值包络（810,812），则该方法还包括将所测量的自偏压值与过程（808）的属性相关联。

公开(公告)号：WO2006041656B1

公开(公告)日：2007-08-09

申请号：PCT/US2005034312

申请日：2005-09-23

Applicant: LAM RES CORP ,  CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

Inventor： CHENG CHIA CHENG ,  GUINEY TIMOTHY J ,  ANNAPRAGADA RAO ,  DESHMUKH SUBHASH

IPC: H01L21/3065 ,  H03H7/40

CPC classification number: H01J37/3299 ,  H01J37/32082 ,  H01J37/32935

Abstract: A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured plasma frequency that exists after the plasma is struck, the measured plasma frequency value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured plasma frequency value with an attribute of the process, if the measured plasma frequency value is outside of a predefined plasma frequency value envelope.

Abstract translation: 公开了一种用于原位监视具有等离子体处理室的等离子体处理系统中的处理的方法。 该方法包括将衬底放置在等离子体处理室中。 该方法还包括在衬底布置在等离子体处理室内时在等离子体处理室内击打等离子体。 该方法还包括获得在等离子体被击中之后存在的测量的等离子体频率，测量的等离子体频率值在等离子体不存在时具有第一值，并且当存在等离子体时具有与第一值不同的至少第二值。 如果测量的等离子体频率值在预定义的等离子体频率值包络之外，则该方法还包括将测量的等离子体频率值与过程的属性相关联。

公开(公告)号：EP1671363A4

公开(公告)日：2010-01-13

申请号：EP04794216

申请日：2004-10-05

Applicant: LAM RES CORP

Inventor： ANNAPRAGADA RAO ,  ZHU HELEN

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC classification number: H01L21/76808 ,  H01L21/31138 ,  H01L21/76811

公开(公告)号：EP1697984A4

公开(公告)日：2009-12-23

申请号：EP04812717

申请日：2004-12-01

Applicant: LAM RES CORP

Inventor： ANNAPRAGADA RAO ,  TAKESHITA KENJI

IPC: H01L21/4763 ,  H01L21/302 ,  H01L21/311 ,  H01L21/44 ,  H01L21/461 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802

公开(公告)号：EP1673805A4

公开(公告)日：2007-07-04

申请号：EP04794215

申请日：2004-10-05

Applicant: LAM RES CORP

Inventor： ANNAPRAGADA RAO ,  ZHU HELEN

IPC: H01L21/8238 ,  H01L21/027 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76808 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N20) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.