公开(公告)号：EP1880414A4

公开(公告)日：2008-07-16

申请号：EP06752442

申请日：2006-05-08

Applicant: LAM RES CORP

Inventor： ZHU HELEN ,  SADJADI REZA

IPC: H01L21/02 ,  G03F7/42 ,  H01L21/311

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/02063

Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

公开(公告)号：WO2010033434A3

公开(公告)日：2010-06-10

申请号：PCT/US2009056716

申请日：2009-09-11

Applicant: LAM RES CORP ,  CIRIGLIANO PETER ,  ZHU HELEN ,  KIM JI SOO ,  SADJADI S M REZA

Inventor： CIRIGLIANO PETER ,  ZHU HELEN ,  KIM JI SOO ,  SADJADI S M REZA

IPC: H01L21/3065

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/312

Abstract: An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.

Abstract translation: 提供了图案化光刻胶掩模下面的蚀刻层。 执行多个侧壁形成工序。 每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。 每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。 每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。 之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

公开(公告)号：WO0019506A9

公开(公告)日：2000-08-31

申请号：PCT/US9920888

申请日：1999-09-24

Applicant: LAM RES CORP

Inventor： ZHU HELEN ,  LINDQUIST ROGER F

IPC: H05H1/46 ,  B01J19/08 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: A semiconductor manufacturing process wherein deep and narrow 0.3 micron and smaller openings are plasma etched in a dielectric layer such as doped and undoped silicon oxide. The etching gas includes at least one fluorocarbon reactant and carbon monoxide and optionally a carrier gas such as Ar. The etching process is carried out in a high density plasma reactor and is effective to etch the dielectric layer with high selectivity to the masking layer and/or a stop layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

Abstract translation: 在诸如掺杂和未掺杂的氧化硅的电介质层中等离子体蚀刻深和窄的0.3微米和更小的开口的半导体制造工艺。 蚀刻气体包括至少一种氟碳反应物和一氧化碳以及任选的载气如Ar。 蚀刻工艺在高密度等离子体反应器中进行，并且对掩蔽层和/或停止层具有高选择性蚀刻介电层是有效的。 该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和更小的接触或通孔开口是有用的。

公开(公告)号：WO2006122119A3

公开(公告)日：2007-06-21

申请号：PCT/US2006017917

申请日：2006-05-08

Applicant: LAM RES CORP

Inventor： ZHU HELEN ,  SADJADI REZA

IPC: H01L21/461

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01L21/02063

Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

Abstract translation: 公开了用于从基底剥离光致抗蚀剂材料的两步法，其中所述基底包括位于光致抗蚀剂材料下方的低k电介质材料和覆盖光致抗蚀剂材料和低k电介质材料的聚合物膜。 两步法的第一步使用氧等离子体去除聚合物膜。 两步法的第二步骤使用氨等离子体去除光致抗蚀剂材料，其中第二步骤在第一步骤完成之后开始。 两步光刻胶剥离工艺的每个步骤分别由工艺参数的特定值定义，包括化学，温度，压力，气体流速，射频功率和频率以及持续时间。

公开(公告)号：EP1671363A4

公开(公告)日：2010-01-13

申请号：EP04794216

申请日：2004-10-05

Applicant: LAM RES CORP

Inventor： ANNAPRAGADA RAO ,  ZHU HELEN

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC classification number: H01L21/76808 ,  H01L21/31138 ,  H01L21/76811

公开(公告)号：EP1673805A4

公开(公告)日：2007-07-04

申请号：EP04794215

申请日：2004-10-05

Applicant: LAM RES CORP

Inventor： ANNAPRAGADA RAO ,  ZHU HELEN

IPC: H01L21/8238 ,  H01L21/027 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76808 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N20) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.

公开(公告)号：IL186729A

公开(公告)日：2012-06-28

申请号：IL18672907

申请日：2007-10-17

Applicant: LAM RES CORP ,  SADJADI REZA ,  ZHU HELEN

Inventor： SADJADI REZA ,  ZHU HELEN

Abstract: A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.

公开(公告)号：AU6246399A

公开(公告)日：2000-04-17

申请号：AU6246399

申请日：1999-09-24

Applicant: LAM RES CORP

Inventor： ZHU HELEN ,  LINDQUIST ROGER F

IPC: H05H1/46 ,  B01J19/08 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

Abstract: A semiconductor manufacturing process wherein deep and narrow 0.3 micron and smaller openings are plasma etched in a dielectric layer such as doped and undoped silicon oxide. The etching gas includes at least one fluorocarbon reactant and carbon monoxide and optionally a carrier gas such as Ar. The etching process is carried out in a high density plasma reactor and is effective to etch the dielectric layer with high selectivity to the masking layer and/or a stop layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.