公开(公告)号：SG11202111277UA

公开(公告)日：2021-11-29

申请号：SG11202111277U

申请日：2020-04-07

Applicant: LAM RES CORP

Inventor： BOWES MICHAEL ,  YANG TSUNG-HAN ,  CHANDRASHEKAR ANAND ,  ZHANG XING

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/14 ,  H01L21/768

Abstract: Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a parasitic CVD component is reduced, resulting in a more self-limiting process. This in turn improves step coverage and conformality of the nucleation layer. Related apparatuses are also provided.

公开(公告)号：SG11202108725XA

公开(公告)日：2021-09-29

申请号：SG11202108725X

申请日：2020-02-13

Applicant: LAM RES CORP

Inventor： YANG TSUNG-HAN ,  BOWES MICHAEL ,  LIU GANG ,  CHANDRASHEKAR ANAND

IPC: H01L21/768 ,  H01L21/285

Abstract: Systems and methods for selective inhibition control in semiconductor manufacturing are provided. An example method includes providing a substrate including a feature having one or more feature openings and a feature interior. A nucleation layer is formed on a surface of the feature interior. Based on a differential inhibition profile, a nonconformal bulk layer is selectively formed on a surface of the nucleation layer to leave a region of the nucleation layer covered, and a region of the nucleation layer uncovered by the nonconformal bulk layer. An inhibition layer is selectively formed on the covered and uncovered regions of the nucleation layer. Tungsten is deposited in the feature in accordance with the differential inhibition profile.