公开(公告)号：WO2010080654A2

公开(公告)日：2010-07-15

申请号：PCT/US2009069291

申请日：2009-12-22

Applicant: LAM RES CORP ,  ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

IPC: H01L21/31 ,  H01L21/3065

CPC classification number: H01L21/32105 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L29/6656

Abstract: A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer.

Abstract translation: 提供了一种从非氧化硅形成间隔物的方法，在衬底上具有水平表面和侧壁表面的含硅隔离层。 提供等离子体氧化处理以在间隔层上形成氧化硅涂层，其中氧化硅涂层在间隔层的侧壁表面上的水平表面和侧壁涂层上提供水平涂层。 提供了选择性地蚀刻间隔层和氧化硅涂层的水平表面相对于间隔层的侧壁表面和氧化硅涂层的侧壁涂层的各向异性主蚀刻。 间隔层被蚀刻，其中氧化硅涂层的侧壁涂层保护间隔层的侧壁表面。

公开(公告)号：SG172097A1

公开(公告)日：2011-07-28

申请号：SG2011042728

申请日：2009-12-22

Applicant: LAM RES CORP

Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

Abstract: A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer.

公开(公告)号：SG196791A1

公开(公告)日：2014-02-13

申请号：SG2014000830

申请日：2009-12-22

Applicant: LAM RES CORP

Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

Abstract: PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATIONTREATMENTA method of forming spacers from a non-silicon oxide, silicon containing spacer layer withhorizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidationtreatment is provided to form a silicon oxide coating over the spacer layer, wherein the siliconoxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings onthe sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etcheshorizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewallsurfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided.The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protectsidewall surfaces of the spacer layer. PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT Amethod of forming spacers from a non-silicon oxide, silicon containingspacer layer with horizontal surfaces and sidewall surfaces over asubstrate is provided. A plasma oxidation treatment is provided to form asilicon oxide coating over the spacer layer, wherein the silicon oxidecoating provides a horizontal coating on the horizontal surfaces andsidewall coatings on the sidewall surfaces of the spacer layer. Ananisotropic main etch that selectively etches horizontal surfaces of thespacer layer and silicon oxide coating with respect to sidewall surfaces ofthe spacer layer and the sidewall coatings of the silicon oxide coating isprovided. The spacer layer is etched, wherein the sidewall coatings of thesilicon oxide coating protect sidewall surfaces of the spacer layer. FIG. 1