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    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT
    1.
    发明申请
    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT 审中-公开
    简介和CD等离子体氧化处理的均匀性控制

    公开(公告)号：WO2010080654A2

    公开(公告)日：2010-07-15

    申请号：PCT/US2009069291

    申请日：2009-12-22

    Applicant: LAM RES CORP ,  ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

    Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

    IPC: H01L21/31 ,  H01L21/3065

    CPC classification number: H01L21/32105 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L29/6656

    Abstract: A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer.

    Abstract translation: 提供了一种从非氧化硅形成间隔物的方法，在衬底上具有水平表面和侧壁表面的含硅隔离层。 提供等离子体氧化处理以在间隔层上形成氧化硅涂层，其中氧化硅涂层在间隔层的侧壁表面上的水平表面和侧壁涂层上提供水平涂层。 提供了选择性地蚀刻间隔层和氧化硅涂层的水平表面相对于间隔层的侧壁表面和氧化硅涂层的侧壁涂层的各向异性主蚀刻。 间隔层被蚀刻，其中氧化硅涂层的侧壁涂层保护间隔层的侧壁表面。

    CONTROLLING ION ENERGY WITHIN A PLASMA CHAMBER
    2.
    发明专利
    CONTROLLING ION ENERGY WITHIN A PLASMA CHAMBER 未知

    公开(公告)号：SG10201403177UA

    公开(公告)日：2015-01-29

    申请号：SG10201403177U

    申请日：2014-06-12

    Applicant: LAM RES CORP

    Inventor： LILL THORSTEN ,  SINGH HARMEET ,  PATERSON ALEX ,  KAMARTHY GOWRI

    Abstract: CONTROLLING ION ENERGY WITHIN A PLASMA Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold. Fig. lA 45

    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT
    4.
    发明专利
    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT 未知

    公开(公告)号：SG172097A1

    公开(公告)日：2011-07-28

    申请号：SG2011042728

    申请日：2009-12-22

    Applicant: LAM RES CORP

    Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

    Abstract: A method of forming spacers from a non-silicon oxide, silicon containing spacer layer with horizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidation treatment is provided to form a silicon oxide coating over the spacer layer, wherein the silicon oxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings on the sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etches horizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewall surfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided. The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protect sidewall surfaces of the spacer layer.

    INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION
    5.
    发明专利
    INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION 未知

    公开(公告)号：SG10201401112YA

    公开(公告)日：2014-11-27

    申请号：SG10201401112Y

    申请日：2014-03-31

    Applicant: LAM RES CORP

    Inventor： SINGH HARMEET ,  LILL THORSTEN ,  VAHEDI VAHID ,  PATERSON ALEX ,  TITUS MONICA ,  KAMARTHY GOWRI

    Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT
    8.
    发明专利
    PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT 未知

    公开(公告)号：SG196791A1

    公开(公告)日：2014-02-13

    申请号：SG2014000830

    申请日：2009-12-22

    Applicant: LAM RES CORP

    Inventor： ZHONG QINGHUA ,  CHO SUNG ,  KAMARTHY GOWRI ,  BRALY LINDA

    Abstract: PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATIONTREATMENTA method of forming spacers from a non-silicon oxide, silicon containing spacer layer withhorizontal surfaces and sidewall surfaces over a substrate is provided. A plasma oxidationtreatment is provided to form a silicon oxide coating over the spacer layer, wherein the siliconoxide coating provides a horizontal coating on the horizontal surfaces and sidewall coatings onthe sidewall surfaces of the spacer layer. An anisotropic main etch that selectively etcheshorizontal surfaces of the spacer layer and silicon oxide coating with respect to sidewallsurfaces of the spacer layer and the sidewall coatings of the silicon oxide coating is provided.The spacer layer is etched, wherein the sidewall coatings of the silicon oxide coating protectsidewall surfaces of the spacer layer. PROFILE AND CD UNIFORMITY CONTROL BY PLASMA OXIDATION TREATMENT Amethod of forming spacers from a non-silicon oxide, silicon containingspacer layer with horizontal surfaces and sidewall surfaces over asubstrate is provided. A plasma oxidation treatment is provided to form asilicon oxide coating over the spacer layer, wherein the silicon oxidecoating provides a horizontal coating on the horizontal surfaces andsidewall coatings on the sidewall surfaces of the spacer layer. Ananisotropic main etch that selectively etches horizontal surfaces of thespacer layer and silicon oxide coating with respect to sidewall surfaces ofthe spacer layer and the sidewall coatings of the silicon oxide coating isprovided. The spacer layer is etched, wherein the sidewall coatings of thesilicon oxide coating protect sidewall surfaces of the spacer layer. FIG. 1

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